A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
SINTERED BODY, METHOD OF PRODUCING SINTERED BODY, SEMICONDUCTOR PRODUCTION DEVICE, AND METHOD OF PRODUCING SEMICONDUCTOR PRODUCTION DEVICE
To provide a sintered body whose corrosion resistance can be improved, a method of producing a sintered body, a semiconductor production device, and a method of producing a semiconductor production device.SOLUTION: The sintered body according to an embodiment of the present invention, comprises not less than 50 mass% of Y5O4F7, and has a relative density of not lower than 97.0% and Vickers hardness of not lower than 2.4 GPa. The method of producing the sintered body according to an embodiment of the present invention, comprises a step of forming a molded body containing Y5O4F7 powder, a step of sintering the molded body in an argon gas atmosphere or in a vacuum atmosphere of not higher than 10-3 Pa, at a temperature of not lower than 1000°C, to form a sintered body, and a step of selecting the sintered body containing not less than 50 mass% of Y5O4F7 and having a relative density of not lower than 97.0% and Vickers hardness of not lower than 2.4 GPa.SELECTED DRAWING: Figure 1
【課題】耐食性を向上させることができる焼結体、焼結体の製造方法、半導体製造装置及び半導体製造装置の製造方法を提供する。【解決手段】実施形態に係る焼結体は、Ｙ５Ｏ４Ｆ７を５０［質量％］以上含み、相対密度が９７．０［％］以上であり、ビッカーズ硬度が２．４［ＧＰａ］以上である。実施形態に係る焼結体の製造方法は、Ｙ５Ｏ４Ｆ７粉を含む成型体を成型するステップと、アルゴンガス雰囲気中または１０－３［Ｐａ］以下の真空雰囲気中で、１０００［℃］以上の温度で、前記成型体を焼結することにより焼結体を形成するステップと、Ｙ５Ｏ４Ｆ７を５０［質量％］以上含み、相対密度が９７．０［％］以上であり、ビッカーズ硬度が２．４［ＧＰａ］以上である前記焼結体を選択するステップと、を備える。【選択図】図１
SINTERED BODY, METHOD OF PRODUCING SINTERED BODY, SEMICONDUCTOR PRODUCTION DEVICE, AND METHOD OF PRODUCING SEMICONDUCTOR PRODUCTION DEVICE
To provide a sintered body whose corrosion resistance can be improved, a method of producing a sintered body, a semiconductor production device, and a method of producing a semiconductor production device.SOLUTION: The sintered body according to an embodiment of the present invention, comprises not less than 50 mass% of Y5O4F7, and has a relative density of not lower than 97.0% and Vickers hardness of not lower than 2.4 GPa. The method of producing the sintered body according to an embodiment of the present invention, comprises a step of forming a molded body containing Y5O4F7 powder, a step of sintering the molded body in an argon gas atmosphere or in a vacuum atmosphere of not higher than 10-3 Pa, at a temperature of not lower than 1000°C, to form a sintered body, and a step of selecting the sintered body containing not less than 50 mass% of Y5O4F7 and having a relative density of not lower than 97.0% and Vickers hardness of not lower than 2.4 GPa.SELECTED DRAWING: Figure 1
【課題】耐食性を向上させることができる焼結体、焼結体の製造方法、半導体製造装置及び半導体製造装置の製造方法を提供する。【解決手段】実施形態に係る焼結体は、Ｙ５Ｏ４Ｆ７を５０［質量％］以上含み、相対密度が９７．０［％］以上であり、ビッカーズ硬度が２．４［ＧＰａ］以上である。実施形態に係る焼結体の製造方法は、Ｙ５Ｏ４Ｆ７粉を含む成型体を成型するステップと、アルゴンガス雰囲気中または１０－３［Ｐａ］以下の真空雰囲気中で、１０００［℃］以上の温度で、前記成型体を焼結することにより焼結体を形成するステップと、Ｙ５Ｏ４Ｆ７を５０［質量％］以上含み、相対密度が９７．０［％］以上であり、ビッカーズ硬度が２．４［ＧＰａ］以上である前記焼結体を選択するステップと、を備える。【選択図】図１
SINTERED BODY, METHOD OF PRODUCING SINTERED BODY, SEMICONDUCTOR PRODUCTION DEVICE, AND METHOD OF PRODUCING SEMICONDUCTOR PRODUCTION DEVICE
焼結体、焼結体の製造方法、半導体製造装置及び半導体製造装置の製造方法
NAGAYAMA KENICHI (author) / NOGUCHI YASUSHI (author) / IIZUKA TOSHIHIRO (author) / KIM CHANG HWAN (author)
2022-06-06
Patent
Electronic Resource
Japanese
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