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SEMICONDUCTOR SINTERED BODY, ELECTRICAL AND ELECTRONIC MEMBER, AND METHOD FOR PRODUCING SEMICONDUCTOR SINTERED BODY
To provide a semiconductor sintered body that makes thermoelectric performance improve by increasing electrical conductivity while retaining low thermal conductivity.SOLUTION: A semiconductor sintered body includes a polycrystalline material. The polycrystalline material includes magnesium silicide or an alloy containing magnesium silicide. An average grain diameter of crystal grains constituting the polycrystalline material is 1 μm or less, and its electrical conductivity is 10,000 S/m or more.SELECTED DRAWING: Figure 1
【課題】低い熱伝導率を有しつつ、電気伝導率を高めることによって、熱電性能を向上させた半導体焼結体を提供する。【解決手段】多結晶体を含む半導体焼結体であって、前記多結晶体は、マグネシウムシリサイド、又はマグネシウムシリサイドを含む合金を含み、前記多結晶体を構成する結晶粒の平均粒径が１μｍ以下であり、電気伝導率が１０，０００Ｓ／ｍ以上である、半導体焼結体。【選択図】図１
SEMICONDUCTOR SINTERED BODY, ELECTRICAL AND ELECTRONIC MEMBER, AND METHOD FOR PRODUCING SEMICONDUCTOR SINTERED BODY
To provide a semiconductor sintered body that makes thermoelectric performance improve by increasing electrical conductivity while retaining low thermal conductivity.SOLUTION: A semiconductor sintered body includes a polycrystalline material. The polycrystalline material includes magnesium silicide or an alloy containing magnesium silicide. An average grain diameter of crystal grains constituting the polycrystalline material is 1 μm or less, and its electrical conductivity is 10,000 S/m or more.SELECTED DRAWING: Figure 1
【課題】低い熱伝導率を有しつつ、電気伝導率を高めることによって、熱電性能を向上させた半導体焼結体を提供する。【解決手段】多結晶体を含む半導体焼結体であって、前記多結晶体は、マグネシウムシリサイド、又はマグネシウムシリサイドを含む合金を含み、前記多結晶体を構成する結晶粒の平均粒径が１μｍ以下であり、電気伝導率が１０，０００Ｓ／ｍ以上である、半導体焼結体。【選択図】図１
SEMICONDUCTOR SINTERED BODY, ELECTRICAL AND ELECTRONIC MEMBER, AND METHOD FOR PRODUCING SEMICONDUCTOR SINTERED BODY
半導体焼結体、電気・電子部材、及び半導体焼結体の製造方法
SADAYORI NAOKI (author)
2019-04-25
Patent
Electronic Resource
Japanese
| European Patent Office | 2024
European Patent Office | 2022
| European Patent Office | 2022
| European Patent Office | 2024
European Patent Office | 2024