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SILICON NITRIDE SINTERED BODY, CIRCUIT BOARD, AND MANUFACTURING METHOD OF SILICON NITRIDE SINTERED BODY
To provide a silicon nitride sintered body having high thermal conductance and a circuit board thereof.SOLUTION: A silicon nitride sintered body involves a plurality of silicon nitride grains and a grain boundary triple point positioned between three or more silicon nitride grains among the plurality of silicon nitride grains, wherein the grain boundary triple point involves Mg and at least one element RE selected from rare earth elements, the ratio of Mg to RE at the grain boundary triple point, Mg/RE, satisfies Mg/RE≤1, and the content of O in the silicon nitride grains is 0.05 mass% or under.SELECTED DRAWING: Figure 2
【課題】 高熱伝導性の窒化ケイ素焼結体および回路基板を提供する。【解決手段】 窒化ケイ素焼結体は、複数の窒化ケイ素粒子と、前記複数の窒化ケイ素粒子のうちの３つ以上の窒化ケイ素粒子間に位置する粒界三重点とを含む窒化ケイ素焼結体であって、前記粒界三重点は、Ｍｇと、希土類元素から選ばれる少なくとも１種の元素ＲＥとを含み、前記粒界三重点におけるＲＥに対するＭｇの割合Ｍｇ／ＲＥがＭｇ／ＲＥ≦１を満たしており、前記窒化ケイ素粒子内のＯ含有量は０．０５質量％以下である。【選択図】図２
SILICON NITRIDE SINTERED BODY, CIRCUIT BOARD, AND MANUFACTURING METHOD OF SILICON NITRIDE SINTERED BODY
To provide a silicon nitride sintered body having high thermal conductance and a circuit board thereof.SOLUTION: A silicon nitride sintered body involves a plurality of silicon nitride grains and a grain boundary triple point positioned between three or more silicon nitride grains among the plurality of silicon nitride grains, wherein the grain boundary triple point involves Mg and at least one element RE selected from rare earth elements, the ratio of Mg to RE at the grain boundary triple point, Mg/RE, satisfies Mg/RE≤1, and the content of O in the silicon nitride grains is 0.05 mass% or under.SELECTED DRAWING: Figure 2
【課題】 高熱伝導性の窒化ケイ素焼結体および回路基板を提供する。【解決手段】 窒化ケイ素焼結体は、複数の窒化ケイ素粒子と、前記複数の窒化ケイ素粒子のうちの３つ以上の窒化ケイ素粒子間に位置する粒界三重点とを含む窒化ケイ素焼結体であって、前記粒界三重点は、Ｍｇと、希土類元素から選ばれる少なくとも１種の元素ＲＥとを含み、前記粒界三重点におけるＲＥに対するＭｇの割合Ｍｇ／ＲＥがＭｇ／ＲＥ≦１を満たしており、前記窒化ケイ素粒子内のＯ含有量は０．０５質量％以下である。【選択図】図２
SILICON NITRIDE SINTERED BODY, CIRCUIT BOARD, AND MANUFACTURING METHOD OF SILICON NITRIDE SINTERED BODY
窒化ケイ素焼結体、回路基板および窒化ケイ素焼結体の製造方法
IMAMURA TOSHIYUKI (author) / GONDA MASAYUKI (author) / SHIMADA KAORU (author) / KAGA YOICHIRO (author) / KAWADA TSUNEHIRO (author)
2022-10-13
Patent
Electronic Resource
Japanese
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