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A platform for research: civil engineering, architecture and urbanism
MANUFACTURING METHOD OF INSULATION CIRCUIT BOARD
To provide good bonding reliability even in an environment where cold and heat are repeated by controlling the degree of vacuum in a predetermined temperature range during bonding.SOLUTION: In a method in which a ceramic substrate and a copper plate made of copper or a copper alloy are laminated through a brazing material, and the ceramic substrate and the copper plate are joined by being heat in a heating furnace while being pressed in the lamination direction to manufacture an insulation circuit board having a copper layer on the surface of the ceramic substrate, the degree of vacuum in the heating furnace is set to 1.0×10-2 Pa or less in a temperature range of 600°C or higher and 770°C or lower.SELECTED DRAWING: Figure 6
【課題】接合時の所定温度域における真空度を制御して、冷熱が繰り返される環境下でも良好な接合信頼性を得る。【解決手段】セラミックス基板と銅又は銅合金からなる銅板とをろう材を介して積層し、その積層方向に加圧した状態で加熱炉内で加熱することによりセラミックス基板と銅板とを接合してセラミックス基板の表面に銅層を有する絶縁回路基板を製造する方法であって、６００℃以上７７０℃以下の温度域における加熱炉内の真空度を１．０×１０-２Ｐａ以下にする。【選択図】 図６
MANUFACTURING METHOD OF INSULATION CIRCUIT BOARD
To provide good bonding reliability even in an environment where cold and heat are repeated by controlling the degree of vacuum in a predetermined temperature range during bonding.SOLUTION: In a method in which a ceramic substrate and a copper plate made of copper or a copper alloy are laminated through a brazing material, and the ceramic substrate and the copper plate are joined by being heat in a heating furnace while being pressed in the lamination direction to manufacture an insulation circuit board having a copper layer on the surface of the ceramic substrate, the degree of vacuum in the heating furnace is set to 1.0×10-2 Pa or less in a temperature range of 600°C or higher and 770°C or lower.SELECTED DRAWING: Figure 6
【課題】接合時の所定温度域における真空度を制御して、冷熱が繰り返される環境下でも良好な接合信頼性を得る。【解決手段】セラミックス基板と銅又は銅合金からなる銅板とをろう材を介して積層し、その積層方向に加圧した状態で加熱炉内で加熱することによりセラミックス基板と銅板とを接合してセラミックス基板の表面に銅層を有する絶縁回路基板を製造する方法であって、６００℃以上７７０℃以下の温度域における加熱炉内の真空度を１．０×１０-２Ｐａ以下にする。【選択図】 図６
MANUFACTURING METHOD OF INSULATION CIRCUIT BOARD
絶縁回路基板の製造方法
SUENAGA KEIICHI (author) / OHIRAKI TOMOYA (author) / NISHIKAWA MASATO (author)
2022-10-14
Patent
Electronic Resource
Japanese
| European Patent Office | 2020