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METHOD FOR PRODUCING SILICON NITRIDE SUBSTRATE
To provide a method for producing a silicon nitride substrate capable of improving durability to etching liquid.SOLUTION: A method for producing a silicon nitride substrate that comprises (a) a mixing step in which silicon nitride powder and sintering aid powder are mixed over 20 hours so that the average particle diameter D50 is 1 μm or less, and a binder is added to prepare a mixture of raw materials, (b) a degreasing step in which a formed sheet of the mixture of raw materials is subjected to degreasing, and (c) a sintering step in which the degreased formed sheet is sintered under conditions that the change in pressure during the sintering from 1300°C is 0.3 MPa or less, and the sintering temperature is within the range of 1800°C to 1950°C. The thickness of the silicon nitride substrate obtained by the sintering of the formed sheet is 0.1 mm or more and 0.4 mm or less.SELECTED DRAWING: Figure 1
【課題】エッチング液への耐久性を向上させることが可能な窒化珪素基板の製造方法。【解決手段】窒化珪素基板の製造方法において、２０時間以上かけて、平均粒径Ｄ５０が１μｍ以下となるように窒化珪素粉末と焼結助剤粉末を混合し、さらにバインダを添加して原料混合体を調整する混合工程と、前記原料混合体のシート成形体を脱脂する脱脂工程と、１３００℃から焼結工程の間の圧力の変化量が０．３ＭＰａ以下、かつ、焼結温度が１８００℃以上１９５０℃以下の範囲内で、脱脂された前記シート成形体を焼結する焼結工程と、を備え、前記シート成形体の焼結によって得られた窒化珪素基板の板厚は、０．１ｍｍ以上０．４ｍｍ以下であることを特徴とする。【選択図】図１
METHOD FOR PRODUCING SILICON NITRIDE SUBSTRATE
To provide a method for producing a silicon nitride substrate capable of improving durability to etching liquid.SOLUTION: A method for producing a silicon nitride substrate that comprises (a) a mixing step in which silicon nitride powder and sintering aid powder are mixed over 20 hours so that the average particle diameter D50 is 1 μm or less, and a binder is added to prepare a mixture of raw materials, (b) a degreasing step in which a formed sheet of the mixture of raw materials is subjected to degreasing, and (c) a sintering step in which the degreased formed sheet is sintered under conditions that the change in pressure during the sintering from 1300°C is 0.3 MPa or less, and the sintering temperature is within the range of 1800°C to 1950°C. The thickness of the silicon nitride substrate obtained by the sintering of the formed sheet is 0.1 mm or more and 0.4 mm or less.SELECTED DRAWING: Figure 1
【課題】エッチング液への耐久性を向上させることが可能な窒化珪素基板の製造方法。【解決手段】窒化珪素基板の製造方法において、２０時間以上かけて、平均粒径Ｄ５０が１μｍ以下となるように窒化珪素粉末と焼結助剤粉末を混合し、さらにバインダを添加して原料混合体を調整する混合工程と、前記原料混合体のシート成形体を脱脂する脱脂工程と、１３００℃から焼結工程の間の圧力の変化量が０．３ＭＰａ以下、かつ、焼結温度が１８００℃以上１９５０℃以下の範囲内で、脱脂された前記シート成形体を焼結する焼結工程と、を備え、前記シート成形体の焼結によって得られた窒化珪素基板の板厚は、０．１ｍｍ以上０．４ｍｍ以下であることを特徴とする。【選択図】図１
METHOD FOR PRODUCING SILICON NITRIDE SUBSTRATE
窒化珪素基板の製造方法
AOKI KATSUYUKI (author) / FUKAZAWA TAKAYUKI (author) / MONMA JUN (author) / IWAI KENTARO (author)
2023-09-07
Patent
Electronic Resource
Japanese
Silicon nitride substrate and method for producing silicon nitride substrate
| European Patent Office | 2017