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CRUCIBLE, METHOD FOR PRODUCING CRUCIBLE, AND METHOD FOR PRODUCING SiC SINGLE CRYSTAL
To provide a crucible intended for SiC single crystal growth via the solution approach, effective in reducing SiC inclusions within the grown SiC single crystal, a method for producing the crucible, and a method for producing SiC single crystal.SOLUTION: A crucible 10 comprises: a container 11 having a bottom 11a and side faces 11b inside, with its top opened; and SiC polycrystal layers 12 covering the entirety of the bottom and the side faces contiguous with the bottom, where the SiC polycrystal layers on the side faces exhibit a relative density of 99% or higher.SELECTED DRAWING: Figure 1
【課題】溶液法によるSiC単結晶成長に用いる坩堝であって、成長したSiC単結晶中に発生するSiCインクルージョンを抑制可能な坩堝、その坩堝の製造方法およびSiC単結晶の製造方法を提供する。【解決手段】内部に底面11aおよび側面11bを有し上面が開口した容器11と、上記底面の全体とその底面と連続する上記側面とを覆うSiC多結晶層12と、を備え、上記側面に設けられたSiC多結晶層は、相対密度が99%以上のSiC多結晶である、坩堝10が提供される。【選択図】図1
CRUCIBLE, METHOD FOR PRODUCING CRUCIBLE, AND METHOD FOR PRODUCING SiC SINGLE CRYSTAL
To provide a crucible intended for SiC single crystal growth via the solution approach, effective in reducing SiC inclusions within the grown SiC single crystal, a method for producing the crucible, and a method for producing SiC single crystal.SOLUTION: A crucible 10 comprises: a container 11 having a bottom 11a and side faces 11b inside, with its top opened; and SiC polycrystal layers 12 covering the entirety of the bottom and the side faces contiguous with the bottom, where the SiC polycrystal layers on the side faces exhibit a relative density of 99% or higher.SELECTED DRAWING: Figure 1
【課題】溶液法によるSiC単結晶成長に用いる坩堝であって、成長したSiC単結晶中に発生するSiCインクルージョンを抑制可能な坩堝、その坩堝の製造方法およびSiC単結晶の製造方法を提供する。【解決手段】内部に底面11aおよび側面11bを有し上面が開口した容器11と、上記底面の全体とその底面と連続する上記側面とを覆うSiC多結晶層12と、を備え、上記側面に設けられたSiC多結晶層は、相対密度が99%以上のSiC多結晶である、坩堝10が提供される。【選択図】図1
CRUCIBLE, METHOD FOR PRODUCING CRUCIBLE, AND METHOD FOR PRODUCING SiC SINGLE CRYSTAL
坩堝、坩堝の製造方法およびSiC単結晶の製造方法
MITANI TAKESHI (author) / ETO KAZUMA (author) / KATO TOMOHISA (author)
2024-03-21
Patent
Electronic Resource
Japanese
SIC CRUCIBLE, METHOD OF MAKING THE CRUCIBLE AND METHOD OF PRODUCING SIC SINGLE CRYSTAL
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