A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
SINTERED COMPOSITE MATERIAL, BONDED BODY, MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS, AND METHOD FOR MANUFACTURING SINTERED COMPOSITE MATERIAL
To provide a sintered composite material of dense quality, which is composed of a constituent phase different from conventional materials and has a linear thermal expansion coefficient difference with aluminum nitride equal to or smaller than that of conventional materials.SOLUTION: A sintered composite material comprises silicon carbide, tungsten silicide, and tungsten carbide, and contains 14.4 wt.% or more and 48.6 wt.% or less of silicon carbide, and has an open porosity of 1% or less.SELECTED DRAWING: Figure 1
【課題】従来とは異なる構成相からなり、窒化アルミニウムとの線熱膨張係数差が従来と同等かあるいは従来よりも小さく、かつ、緻密質の複合材料焼結体を提供する。【解決手段】複合材料焼結体が、炭化珪素と、珪化タングステンと、炭化タングステンとから構成され、炭化珪素を１４．４ｗｔ％以上４８．６ｗｔ％以下含有し、開気孔率が１％以下である、ようにした。【選択図】図１
SINTERED COMPOSITE MATERIAL, BONDED BODY, MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS, AND METHOD FOR MANUFACTURING SINTERED COMPOSITE MATERIAL
To provide a sintered composite material of dense quality, which is composed of a constituent phase different from conventional materials and has a linear thermal expansion coefficient difference with aluminum nitride equal to or smaller than that of conventional materials.SOLUTION: A sintered composite material comprises silicon carbide, tungsten silicide, and tungsten carbide, and contains 14.4 wt.% or more and 48.6 wt.% or less of silicon carbide, and has an open porosity of 1% or less.SELECTED DRAWING: Figure 1
【課題】従来とは異なる構成相からなり、窒化アルミニウムとの線熱膨張係数差が従来と同等かあるいは従来よりも小さく、かつ、緻密質の複合材料焼結体を提供する。【解決手段】複合材料焼結体が、炭化珪素と、珪化タングステンと、炭化タングステンとから構成され、炭化珪素を１４．４ｗｔ％以上４８．６ｗｔ％以下含有し、開気孔率が１％以下である、ようにした。【選択図】図１
SINTERED COMPOSITE MATERIAL, BONDED BODY, MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS, AND METHOD FOR MANUFACTURING SINTERED COMPOSITE MATERIAL
複合材料焼結体、接合体、半導体製造装置用部材、および、複合材料焼結体の製造方法
IBATA KANA (author) / NAGAI ASUMI (author) / INOUE KATSUHIRO (author)
2024-10-15
Patent
Electronic Resource
Japanese
IPC:
C04B
Kalk
,
LIME
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