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Manufacturing method of sintered reaction bonded silicon nitride ceramics from silicon scrap and sintered reaction bonded silicon nitride ceramics using the same
The present invention relates to a method for manufacturing a reaction sintered silicon nitride sintered body, which comprises: a step a) of forming mixed powder including silicon powder and a sintering aid; a step b) of manufacturing a silicon nitride reaction sintered body by performing nitride reaction in the formed body; and a step c) of manufacturing sintered silicon nitride by sintering the silicon nitride reaction sintered body. The silicon powder is satisfied with relational expression 1, 0.5 μm <= D_50 <= 3 μm, and relational expression 2, W_PSD <= 4. In relational expression 1, D_50 is a particle size corresponding to 50% of particle accumulative distribution of the silicon powder. In relational expression 2, W_PSD = (D_90 − D_10)/D_50, D_90 is a particle size corresponding to 90% of particle accumulative distribution of the silicon powder. D_10 is a particle size corresponding to 10% of particle accumulative distribution of the silicon powder. The present invention can improve thermal conductivity.
본 발명에 따른 반응소결 질화규소 소결체 제조방법은 a) 규소 분말 및 소결조제를 포함하는 혼합분말을 성형하는 단계; b) 성형된 성형체를 질화반응시켜 질화규소 반응소결체를 제조하는 단계; 및 c) 상기 질화규소 반응소결체를 소결하여 질화규소 후소결체를 제조하는 단계를 포함하며, 상기 규소 분말은 하기 관계식 1 및 2를 만족하는 것을 특징으로 한다: [관계식 1] 0.5 ㎛ ≤ D≤3 ㎛ [관계식 2] W≤ 4 (상기 관계식 1에서, D은 상기 규소 분말의 입경 누적분포에서 50%에 해당하는 입자크기이고, 상기 관계식 2에서, W= (D-D)/D, D은 상기 규소 분말의 입경 누적분포에서 90%에 해당하는 입자크기이며, D은 상기 규소 분말의 입경 누적분포에서 10%에 해당하는 입자크기이다.)
Manufacturing method of sintered reaction bonded silicon nitride ceramics from silicon scrap and sintered reaction bonded silicon nitride ceramics using the same
The present invention relates to a method for manufacturing a reaction sintered silicon nitride sintered body, which comprises: a step a) of forming mixed powder including silicon powder and a sintering aid; a step b) of manufacturing a silicon nitride reaction sintered body by performing nitride reaction in the formed body; and a step c) of manufacturing sintered silicon nitride by sintering the silicon nitride reaction sintered body. The silicon powder is satisfied with relational expression 1, 0.5 μm <= D_50 <= 3 μm, and relational expression 2, W_PSD <= 4. In relational expression 1, D_50 is a particle size corresponding to 50% of particle accumulative distribution of the silicon powder. In relational expression 2, W_PSD = (D_90 − D_10)/D_50, D_90 is a particle size corresponding to 90% of particle accumulative distribution of the silicon powder. D_10 is a particle size corresponding to 10% of particle accumulative distribution of the silicon powder. The present invention can improve thermal conductivity.
본 발명에 따른 반응소결 질화규소 소결체 제조방법은 a) 규소 분말 및 소결조제를 포함하는 혼합분말을 성형하는 단계; b) 성형된 성형체를 질화반응시켜 질화규소 반응소결체를 제조하는 단계; 및 c) 상기 질화규소 반응소결체를 소결하여 질화규소 후소결체를 제조하는 단계를 포함하며, 상기 규소 분말은 하기 관계식 1 및 2를 만족하는 것을 특징으로 한다: [관계식 1] 0.5 ㎛ ≤ D≤3 ㎛ [관계식 2] W≤ 4 (상기 관계식 1에서, D은 상기 규소 분말의 입경 누적분포에서 50%에 해당하는 입자크기이고, 상기 관계식 2에서, W= (D-D)/D, D은 상기 규소 분말의 입경 누적분포에서 90%에 해당하는 입자크기이며, D은 상기 규소 분말의 입경 누적분포에서 10%에 해당하는 입자크기이다.)
Manufacturing method of sintered reaction bonded silicon nitride ceramics from silicon scrap and sintered reaction bonded silicon nitride ceramics using the same
규소 스크랩을 이용한 반응소결 질화규소 소결체 제조방법 및 이로부터 제조된 반응소결 질화규소 소결체
LEE HYUN KWOUN (author) / PARK EUI KEUN (author) / KIM TAE GYEONG (author) / OH HYEON MYEONG (author)
2019-04-24
Patent
Electronic Resource
Korean
IPC:
C04B
Kalk
,
LIME
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