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A platform for research: civil engineering, architecture and urbanism
MANUFACTURING METHOD OF SINTERED REACTION BONDED SILICON NITRIDE WITH HIGH THERMAL CONDUCTIVITY
Provided is a method for producing reaction sintered silicon nitride having high thermal conductivity and suitable to be used for a heat insulation structure such as an electric device or the like. The present invention provides a method for producing a reaction sintered silicon nitride sintered body, the method comprising the steps of: milling a raw ingredient powder including an Si powder into a size of 1 micron or less; mixing and molding the milled Si powder and a sintering preparation; nitriding the molded product at 1350-1450^oC to form reaction bonded silicon nitride in the molded body; and producing a reaction sintered silicon nitride sintered body by post-sintering the reaction bonded silicon nitride at a temperature of 1850^oC or more. According to the present invention, a reaction sintered silicon nitride sintered body having high thermal conductivity can be provided.
전력 디바이스 등의 방열 구조에 사용하기 적합한 고열전도율을 갖는 반응소결질화규소소결체의 제조 방법이 제공된다. 본 발명은 Si 분말을 포함하는 원료 분말을 1 미크론 이하의 크기로 밀링하는 단계; 상기 밀링된 Si 분말 및 소결 조제를 혼합 및 성형하는 단계; 상기 성형체를 1350~1450C에서 질화 처리하여 상기 성형체 내에 반응결합 질화규소를 형성하는 단계; 및 상기 반응결합 질화규소를 1850C 이상의 온도에서 후소결하여반응소결질화규소소결체를 제조하는 단계를 포함하는 반응소결질화규소소결체의 제조 방법을 제공한다. 본 발명에 따르면, 높은 열전도율의 반응소결질화규소소결체를 제공할 수 있게 된다.
MANUFACTURING METHOD OF SINTERED REACTION BONDED SILICON NITRIDE WITH HIGH THERMAL CONDUCTIVITY
Provided is a method for producing reaction sintered silicon nitride having high thermal conductivity and suitable to be used for a heat insulation structure such as an electric device or the like. The present invention provides a method for producing a reaction sintered silicon nitride sintered body, the method comprising the steps of: milling a raw ingredient powder including an Si powder into a size of 1 micron or less; mixing and molding the milled Si powder and a sintering preparation; nitriding the molded product at 1350-1450^oC to form reaction bonded silicon nitride in the molded body; and producing a reaction sintered silicon nitride sintered body by post-sintering the reaction bonded silicon nitride at a temperature of 1850^oC or more. According to the present invention, a reaction sintered silicon nitride sintered body having high thermal conductivity can be provided.
전력 디바이스 등의 방열 구조에 사용하기 적합한 고열전도율을 갖는 반응소결질화규소소결체의 제조 방법이 제공된다. 본 발명은 Si 분말을 포함하는 원료 분말을 1 미크론 이하의 크기로 밀링하는 단계; 상기 밀링된 Si 분말 및 소결 조제를 혼합 및 성형하는 단계; 상기 성형체를 1350~1450C에서 질화 처리하여 상기 성형체 내에 반응결합 질화규소를 형성하는 단계; 및 상기 반응결합 질화규소를 1850C 이상의 온도에서 후소결하여반응소결질화규소소결체를 제조하는 단계를 포함하는 반응소결질화규소소결체의 제조 방법을 제공한다. 본 발명에 따르면, 높은 열전도율의 반응소결질화규소소결체를 제공할 수 있게 된다.
MANUFACTURING METHOD OF SINTERED REACTION BONDED SILICON NITRIDE WITH HIGH THERMAL CONDUCTIVITY
고열전도율을 갖는 반응소결질화규소의 제조 방법
KIM HAI DOO (author) / PARK YOUNG JO (author) / KIM JIN MYUNG (author) / LEE JAE WOOK (author) / KO JAE WOONG (author) / KIM HA NEUL (author)
2015-11-06
Patent
Electronic Resource
Korean
IPC:
C04B
Kalk
,
LIME
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