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A platform for research: civil engineering, architecture and urbanism
MANUFACTURING METHOD OF SINTERED REACTION BONDED SILICON NITRIDE WITH HIGH THERMAL CONDUCTIVITY
Provided is a manufacturing method of reaction sintered silicon nitride having high thermal conductivity which is proper to be used to a heat protection structure of a powered device, or the like. The manufacturing method of reaction sintered silicon nitride comprises the steps of: milling raw powder including Si powder to have sizes less than or equal to 1 micron; mixing the Si powder milled from the previous step and a preparation for sintering and forming the mixture of the same; nitridation processing the formed body at 1350 to 1450°C and forming reaction bonded silicon nitride inside the formed body; and manufacturing reaction sintered silicon nitride sintered body by sintering the reaction bonded silicon nitride at temperature greater than or equal to 1850°C. According to the present invention, the reaction sintered silicon nitride sintered body has high thermal conductivity.
전력 디바이스 등의 방열 구조에 사용하기 적합한 고열전도율을 갖는 반응소결질화규소소결체의 제조 방법이 제공된다. 본 발명은 Si 분말을 포함하는 원료 분말을 1 미크론 이하의 크기로 밀링하는 단계; 상기 밀링된 Si 분말 및 소결 조제를 혼합 및 성형하는 단계; 상기 성형체를 1350~1450C에서 질화 처리하여 상기 성형체 내에 반응결합 질화규소를 형성하는 단계; 및 상기 반응결합 질화규소를 1850C 이상의 온도에서 후소결하여반응소결질화규소소결체를 제조하는 단계를 포함하는 반응소결질화규소소결체의 제조 방법을 제공한다. 본 발명에 따르면, 높은 열전도율의 반응소결질화규소소결체를 제공할 수 있게 된다.
MANUFACTURING METHOD OF SINTERED REACTION BONDED SILICON NITRIDE WITH HIGH THERMAL CONDUCTIVITY
Provided is a manufacturing method of reaction sintered silicon nitride having high thermal conductivity which is proper to be used to a heat protection structure of a powered device, or the like. The manufacturing method of reaction sintered silicon nitride comprises the steps of: milling raw powder including Si powder to have sizes less than or equal to 1 micron; mixing the Si powder milled from the previous step and a preparation for sintering and forming the mixture of the same; nitridation processing the formed body at 1350 to 1450°C and forming reaction bonded silicon nitride inside the formed body; and manufacturing reaction sintered silicon nitride sintered body by sintering the reaction bonded silicon nitride at temperature greater than or equal to 1850°C. According to the present invention, the reaction sintered silicon nitride sintered body has high thermal conductivity.
전력 디바이스 등의 방열 구조에 사용하기 적합한 고열전도율을 갖는 반응소결질화규소소결체의 제조 방법이 제공된다. 본 발명은 Si 분말을 포함하는 원료 분말을 1 미크론 이하의 크기로 밀링하는 단계; 상기 밀링된 Si 분말 및 소결 조제를 혼합 및 성형하는 단계; 상기 성형체를 1350~1450C에서 질화 처리하여 상기 성형체 내에 반응결합 질화규소를 형성하는 단계; 및 상기 반응결합 질화규소를 1850C 이상의 온도에서 후소결하여반응소결질화규소소결체를 제조하는 단계를 포함하는 반응소결질화규소소결체의 제조 방법을 제공한다. 본 발명에 따르면, 높은 열전도율의 반응소결질화규소소결체를 제공할 수 있게 된다.
MANUFACTURING METHOD OF SINTERED REACTION BONDED SILICON NITRIDE WITH HIGH THERMAL CONDUCTIVITY
고열전도율을 갖는 반응소결질화규소의 제조 방법
KIM HAI DOO (author) / PARK YOUNG JO (author) / KIM JIN MYUNG (author) / LEE JAE WOOK (author) / KO JAE WOONG (author) / KIM HA NEUL (author)
2016-04-18
Patent
Electronic Resource
Korean
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