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COMPLEX OXIDE SINTERED BODY SPUTTERING TARGET TRANSPARENT CONDUCTIVE OXIDE FILM AND METHOD FOR PRODUCING SAME
본 발명은, 인듐, 지르코늄 및 이트륨을 각각 In, Zr 및 Y라 했을 때, 원자비로 Zr/(In+Zr+Y)가 0.05 내지 4.5원자%이고, Y/(In+Zr+Y)가 0.005 내지 0.5원자%인 복합 산화물 소결체(10)를 제공한다. 또한, 해당 복합 산화물 소결체(10)로 이루어진 스퍼터링 타겟, 및 해당 스퍼터링 타겟을 스퍼터링함으로써 얻어지는 산화물 투명 도전막을 제공한다.
The present invention provides a complex oxide sintered body 10 wherein Zr/(In + Zr + Y) is 0.05 to 4.5 at% and Y/(In + Zr + Y) is 0.005 to 0.5 at% in an atomic ratio when indium, zirconium, and yttrium are designated by In, Zr, and Y, respectively. Moreover, the present invention provides a sputtering target including the complex oxide sintered body 10 and a transparent conductive oxide film obtained by sputtering the sputtering target.
COMPLEX OXIDE SINTERED BODY SPUTTERING TARGET TRANSPARENT CONDUCTIVE OXIDE FILM AND METHOD FOR PRODUCING SAME
본 발명은, 인듐, 지르코늄 및 이트륨을 각각 In, Zr 및 Y라 했을 때, 원자비로 Zr/(In+Zr+Y)가 0.05 내지 4.5원자%이고, Y/(In+Zr+Y)가 0.005 내지 0.5원자%인 복합 산화물 소결체(10)를 제공한다. 또한, 해당 복합 산화물 소결체(10)로 이루어진 스퍼터링 타겟, 및 해당 스퍼터링 타겟을 스퍼터링함으로써 얻어지는 산화물 투명 도전막을 제공한다.
The present invention provides a complex oxide sintered body 10 wherein Zr/(In + Zr + Y) is 0.05 to 4.5 at% and Y/(In + Zr + Y) is 0.005 to 0.5 at% in an atomic ratio when indium, zirconium, and yttrium are designated by In, Zr, and Y, respectively. Moreover, the present invention provides a sputtering target including the complex oxide sintered body 10 and a transparent conductive oxide film obtained by sputtering the sputtering target.
COMPLEX OXIDE SINTERED BODY SPUTTERING TARGET TRANSPARENT CONDUCTIVE OXIDE FILM AND METHOD FOR PRODUCING SAME
복합 산화물 소결체, 스퍼터링 타겟 및 산화물 투명 도전막 그리고 그 제조 방법
2019-09-30
Patent
Electronic Resource
Korean
European Patent Office | 2019
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|European Patent Office | 2019
European Patent Office | 2019
|OXIDE SINTERED BODY, SPUTTERING TARGET, AND TRANSPARENT CONDUCTIVE FILM
European Patent Office | 2019
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