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DENSE COMPOSITE MATERIAL METHOD FOR MANUFACTURING THE SAME JOINED BODY AND MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUSES
질화알루미늄과의 선열팽창 계수차가 매우 작고, 열전도율, 치밀성 및 강도가 충분히 높은 복합 재료를 제공한다. 본 발명의 치밀질 복합 재료는, 함유량이 많은 것의 상위 3개가 탄화규소, 티탄실리콘카바이드, 탄화티탄이고, 이 정렬 순서가 함유량이 많은 것부터 적은 것의 순서를 나타내고 있으며, 탄화규소를 51 질량％∼68 질량％ 함유하고, 규화티탄을 함유하지 않으며, 개기공률이 1％ 이하인 것이다. 이러한 치밀질 복합 재료의 특성은, 예컨대, 40℃∼570℃의 평균 선열팽창 계수가 5.4 ppm/K∼6.0 ppm/K, 열전도율이 100 W/mㆍK 이상, 4점 굽힘 강도가 300 ㎫ 이상이다.
A member for a semiconductor manufacturing apparatus includes an AlN electrostatic chuck, a cooling plate, and a cooling plate-chuck bonding layer. The cooling plate includes first to third substrates, a first metal bonding layer between the first and second substrates, a second metal bonding layer between the second and third substrates, and a refrigerant path. The first to third substrates are formed of a dense composite material containing SiC, Ti3SiC2, and TiC. The metal bonding layers are formed by thermal compression bonding of the substrates with an Al—Si—Mg metal bonding material interposed between the first and second substrates and between the second and third substrates.
DENSE COMPOSITE MATERIAL METHOD FOR MANUFACTURING THE SAME JOINED BODY AND MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUSES
질화알루미늄과의 선열팽창 계수차가 매우 작고, 열전도율, 치밀성 및 강도가 충분히 높은 복합 재료를 제공한다. 본 발명의 치밀질 복합 재료는, 함유량이 많은 것의 상위 3개가 탄화규소, 티탄실리콘카바이드, 탄화티탄이고, 이 정렬 순서가 함유량이 많은 것부터 적은 것의 순서를 나타내고 있으며, 탄화규소를 51 질량％∼68 질량％ 함유하고, 규화티탄을 함유하지 않으며, 개기공률이 1％ 이하인 것이다. 이러한 치밀질 복합 재료의 특성은, 예컨대, 40℃∼570℃의 평균 선열팽창 계수가 5.4 ppm/K∼6.0 ppm/K, 열전도율이 100 W/mㆍK 이상, 4점 굽힘 강도가 300 ㎫ 이상이다.
A member for a semiconductor manufacturing apparatus includes an AlN electrostatic chuck, a cooling plate, and a cooling plate-chuck bonding layer. The cooling plate includes first to third substrates, a first metal bonding layer between the first and second substrates, a second metal bonding layer between the second and third substrates, and a refrigerant path. The first to third substrates are formed of a dense composite material containing SiC, Ti3SiC2, and TiC. The metal bonding layers are formed by thermal compression bonding of the substrates with an Al—Si—Mg metal bonding material interposed between the first and second substrates and between the second and third substrates.
DENSE COMPOSITE MATERIAL METHOD FOR MANUFACTURING THE SAME JOINED BODY AND MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUSES
치밀질 복합 재료, 그 제법, 접합체 및 반도체 제조 장치용 부재
2020-05-26
Patent
Electronic Resource
Korean
IPC:
C04B
Kalk
,
LIME
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