A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Dense composite material, method for producing the same, joined body, and member for semiconductor manufacturing device
According to the present invention, a dense composite material includes titanium silicide in an amount of 43 to 63 mass %; silicon carbide in an amount less than the mass percentage of the titanium silicide; and titanium carbide in an amount less than the mass percentage of the titanium silicide. In the dense composite material, a maximum value of interparticle distances of the silicon carbide is 40 μm or less, a standard deviation of the interparticle distances is 10 or less, and an open porosity of the dense composite material is 1% or less.
Dense composite material, method for producing the same, joined body, and member for semiconductor manufacturing device
According to the present invention, a dense composite material includes titanium silicide in an amount of 43 to 63 mass %; silicon carbide in an amount less than the mass percentage of the titanium silicide; and titanium carbide in an amount less than the mass percentage of the titanium silicide. In the dense composite material, a maximum value of interparticle distances of the silicon carbide is 40 μm or less, a standard deviation of the interparticle distances is 10 or less, and an open porosity of the dense composite material is 1% or less.
Dense composite material, method for producing the same, joined body, and member for semiconductor manufacturing device
NAGAI ASUMI (author) / NISHIMURA NOBORU (author) / YAMAGUCHI HIROFUMI (author)
2023-01-10
Patent
Electronic Resource
English
European Patent Office | 2024
| European Patent Office | 2021
| European Patent Office | 2021
| European Patent Office | 2021
European Patent Office | 2020