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DENSE COMPOSITE MATERIAL METHOD FOR PRODUCING THE SAME JOINED BODY AND MEMBER FOR SEMICONDUCTOR MANUFACTURING DEVICE
본 발명의 치밀질 복합 재료는, 규화티탄을 43~63 질량% 함유하고, 탄화규소 및 탄화티탄을 각각 규화티탄의 질량%보다 소량 함유하며, 탄화규소의 입자간 거리의 최대치가 40 ㎛ 이하이고 표준편차가 10 이하이며, 개기공률이 1% 이하인 것이다.
According to the present invention, a dense composite material includes titanium silicide in an amount of 43 to 63 mass %; silicon carbide in an amount less than the mass percentage of the titanium silicide; and titanium carbide in an amount less than the mass percentage of the titanium silicide. In the dense composite material, a maximum value of interparticle distances of the silicon carbide is 40 μm or less, a standard deviation of the interparticle distances is 10 or less, and an open porosity of the dense composite material is 1% or less.
DENSE COMPOSITE MATERIAL METHOD FOR PRODUCING THE SAME JOINED BODY AND MEMBER FOR SEMICONDUCTOR MANUFACTURING DEVICE
본 발명의 치밀질 복합 재료는, 규화티탄을 43~63 질량% 함유하고, 탄화규소 및 탄화티탄을 각각 규화티탄의 질량%보다 소량 함유하며, 탄화규소의 입자간 거리의 최대치가 40 ㎛ 이하이고 표준편차가 10 이하이며, 개기공률이 1% 이하인 것이다.
According to the present invention, a dense composite material includes titanium silicide in an amount of 43 to 63 mass %; silicon carbide in an amount less than the mass percentage of the titanium silicide; and titanium carbide in an amount less than the mass percentage of the titanium silicide. In the dense composite material, a maximum value of interparticle distances of the silicon carbide is 40 μm or less, a standard deviation of the interparticle distances is 10 or less, and an open porosity of the dense composite material is 1% or less.
DENSE COMPOSITE MATERIAL METHOD FOR PRODUCING THE SAME JOINED BODY AND MEMBER FOR SEMICONDUCTOR MANUFACTURING DEVICE
치밀질 복합 재료, 그 제법, 접합체 및 반도체 제조 장치용 부재
2024-04-24
Patent
Electronic Resource
Korean
IPC:
C04B
Kalk
,
LIME
/
B21D
WORKING OR PROCESSING OF SHEET METAL OR METAL TUBES, RODS OR PROFILES WITHOUT ESSENTIALLY REMOVING MATERIAL
,
Bearbeiten oder Verarbeiten von Blechen, Metallrohren, -stangen oder -profilen ohne wesentliches Abtragen des Werkstoffs
/
H01L
Halbleiterbauelemente
,
SEMICONDUCTOR DEVICES
| European Patent Office | 2021
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