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    MOLYBDENUM OXIDE BASED SINTERED BODY METAL OXIDE THIN FILM USING THE SINTERED BODY AND THIN FILM TRANSISTORS AND DISPLA DEVICES COMPRISING THE THIN FILMS

    본 발명은 저반사, 내화학성 및 내열성이 우수한 몰리브덴 산화물계 소결체, 상기 소결체를 이용한 박막, 상기 박막을 포함하는 박막트랜지스터 및 디스플레이 장치를 제공한다.

    The present invention provides a molybdenum oxide-based sintered body having excellent low reflection, chemical resistance and heat resistance, a thin film using the sintered body, and a thin film transistor and a display device comprising the thin film. An oxide sintered body of the present invention comprises: a molybdenum oxide containing MoO_2 and MoO_3, wherein the content of MoO_2 among MoO_2 and MoO_3 is 50 to 90 wr%; at least one metal oxide (M1) which is selected from the group consisting of Nb_2O_5, Ta_2O_5, ZrO_2, TiO_2, SnO_2, and WO_3; and at least one metal (M2) which is selected from the group consisting of Mo, Ti, Cr, W, and Cu.

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    MOLYBDENUM OXIDE BASED SINTERED BODY METAL OXIDE THIN FILM USING THE SINTERED BODY AND THIN FILM TRANSISTORS AND DISPLA DEVICES COMPRISING THE THIN FILMS

    본 발명은 저반사, 내화학성 및 내열성이 우수한 몰리브덴 산화물계 소결체, 상기 소결체를 이용한 박막, 상기 박막을 포함하는 박막트랜지스터 및 디스플레이 장치를 제공한다.

    The present invention provides a molybdenum oxide-based sintered body having excellent low reflection, chemical resistance and heat resistance, a thin film using the sintered body, and a thin film transistor and a display device comprising the thin film. An oxide sintered body of the present invention comprises: a molybdenum oxide containing MoO_2 and MoO_3, wherein the content of MoO_2 among MoO_2 and MoO_3 is 50 to 90 wr%; at least one metal oxide (M1) which is selected from the group consisting of Nb_2O_5, Ta_2O_5, ZrO_2, TiO_2, SnO_2, and WO_3; and at least one metal (M2) which is selected from the group consisting of Mo, Ti, Cr, W, and Cu.

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    MOLYBDENUM OXIDE BASED SINTERED BODY METAL OXIDE THIN FILM USING THE SINTERED BODY AND THIN FILM TRANSISTORS AND DISPLA DEVICES COMPRISING THE THIN FILMS

    본 발명은 저반사, 내화학성 및 내열성이 우수한 몰리브덴 산화물계 소결체, 상기 소결체를 이용한 박막, 상기 박막을 포함하는 박막트랜지스터 및 디스플레이 장치를 제공한다.

    The present invention provides a molybdenum oxide-based sintered body having excellent low reflection, chemical resistance and heat resistance, a thin film using the sintered body, and a thin film transistor and a display device comprising the thin film. An oxide sintered body of the present invention comprises: a molybdenum oxide containing MoO_2 and MoO_3, wherein the content of MoO_2 among MoO_2 and MoO_3 is 50 to 90 wr%; at least one metal oxide (M1) which is selected from the group consisting of Nb_2O_5, Ta_2O_5, ZrO_2, TiO_2, SnO_2, and WO_3; and at least one metal (M2) which is selected from the group consisting of Mo, Ti, Cr, W, and Cu.

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    Title:

    MOLYBDENUM OXIDE BASED SINTERED BODY METAL OXIDE THIN FILM USING THE SINTERED BODY AND THIN FILM TRANSISTORS AND DISPLA DEVICES COMPRISING THE THIN FILMS

    Additional title:

    몰리브덴 산화물계 소결체, 상기 소결체를 이용한 박막, 상기 박막을 포함하는 박막트랜지스터 및 디스플레이 장치

    Publication date:

    2025-01-22

    Type of media:

    Patent

    Type of material:

    Electronic Resource

    Language:

    Korean

    Classification:

    IPC:  C04B Kalk , LIME / C23C Beschichten metallischer Werkstoffe , COATING METALLIC MATERIAL / H10D / H10K

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