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ETCHANT COMPOSITION FOR TITANIUM NITRIDE LAYER
The present invention relates to an etchant composition for a titanium nitride (TiN) film. According to an embodiment of the present invention, the etchant composition for a TiN film includes 1,1-carbonylimidazole to adjust the etching speed and selectively etch TiN. The etchant composition includes: an amino-oxide-based compound or a quaternary ammonium-based compound; an oxidant; and water. The amino-oxide-based compound can be one or more substances selected from a group including pyridine-N-oxides, 4-nitropyridine-N-oxides, trimethylamine-N-oxides, and N-methylmorpholine-N-oxides.
본 발명에 따른 질화티타늄 막의 식각액 조성물은 1,1-카르보닐 이미다졸을 포함함으로써 식각속도를 조절할 수 있으며, 질화티타늄(TiN)을 선택적으로 식각할 수 있다.
ETCHANT COMPOSITION FOR TITANIUM NITRIDE LAYER
The present invention relates to an etchant composition for a titanium nitride (TiN) film. According to an embodiment of the present invention, the etchant composition for a TiN film includes 1,1-carbonylimidazole to adjust the etching speed and selectively etch TiN. The etchant composition includes: an amino-oxide-based compound or a quaternary ammonium-based compound; an oxidant; and water. The amino-oxide-based compound can be one or more substances selected from a group including pyridine-N-oxides, 4-nitropyridine-N-oxides, trimethylamine-N-oxides, and N-methylmorpholine-N-oxides.
본 발명에 따른 질화티타늄 막의 식각액 조성물은 1,1-카르보닐 이미다졸을 포함함으로써 식각속도를 조절할 수 있으며, 질화티타늄(TiN)을 선택적으로 식각할 수 있다.
ETCHANT COMPOSITION FOR TITANIUM NITRIDE LAYER
질화티타늄 막의 식각액 조성물
CHO YONG JUN (author) / YOON SEONG WOONG (author) / LEE KYONG HO (author)
2017-11-13
Patent
Electronic Resource
Korean
Etchant composition and manufacturing method of metal pattern using the same
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