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    ETCHANT COMPOSITION FOR ETCHING METAL LAYER

    New search for: KIM SEONG MIN
    New search for: YOO JAE SUNG
    New search for: LEE EUN JUNG

    The present invention relates to a metal film etchant composition. More specifically, the present invention comprises, based on the total weight of the etchant composition: (A) 3.5-15 wt% of nitric acid; (B) 20-30 wt% of hydrogen peroxide; (C) 0.1-2 wt% of sulfate-based salts; and (D) water remainder. The sulfate-based salts do not contain metal ions.

    본 발명은 금속막 식각액 조성물에 관한 것으로, 보다 상세하게는 식각액 조성물 총 중량에 대하여 (A) 질산 3.5 내지 15 중량%; (B) 과산화수소 20 내지 30 중량%; (C) 설페이트계 염 0.1 내지 2 중량% 및 (D) 물 잔량을 포함하며, 상기 설페이트계 염은 금속 이온을 포함하지 않는 금속막 식각액 조성물에 관한 것이다.

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    ETCHANT COMPOSITION FOR ETCHING METAL LAYER

    New search for: KIM SEONG MIN
    New search for: YOO JAE SUNG
    New search for: LEE EUN JUNG

    The present invention relates to a metal film etchant composition. More specifically, the present invention comprises, based on the total weight of the etchant composition: (A) 3.5-15 wt% of nitric acid; (B) 20-30 wt% of hydrogen peroxide; (C) 0.1-2 wt% of sulfate-based salts; and (D) water remainder. The sulfate-based salts do not contain metal ions.

    본 발명은 금속막 식각액 조성물에 관한 것으로, 보다 상세하게는 식각액 조성물 총 중량에 대하여 (A) 질산 3.5 내지 15 중량%; (B) 과산화수소 20 내지 30 중량%; (C) 설페이트계 염 0.1 내지 2 중량% 및 (D) 물 잔량을 포함하며, 상기 설페이트계 염은 금속 이온을 포함하지 않는 금속막 식각액 조성물에 관한 것이다.

    Access

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    ETCHANT COMPOSITION FOR ETCHING METAL LAYER

    New search for: KIM SEONG MIN
    New search for: YOO JAE SUNG
    New search for: LEE EUN JUNG

    The present invention relates to a metal film etchant composition. More specifically, the present invention comprises, based on the total weight of the etchant composition: (A) 3.5-15 wt% of nitric acid; (B) 20-30 wt% of hydrogen peroxide; (C) 0.1-2 wt% of sulfate-based salts; and (D) water remainder. The sulfate-based salts do not contain metal ions.

    본 발명은 금속막 식각액 조성물에 관한 것으로, 보다 상세하게는 식각액 조성물 총 중량에 대하여 (A) 질산 3.5 내지 15 중량%; (B) 과산화수소 20 내지 30 중량%; (C) 설페이트계 염 0.1 내지 2 중량% 및 (D) 물 잔량을 포함하며, 상기 설페이트계 염은 금속 이온을 포함하지 않는 금속막 식각액 조성물에 관한 것이다.

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    Document information
    Title:

    ETCHANT COMPOSITION FOR ETCHING METAL LAYER

    Additional title:

    금속막 식각액 조성물

    Contributors:

    KIM SEONG MIN (author) / YOO JAE SUNG (author) / LEE EUN JUNG (author)

    Publication date:

    2018-04-25

    Type of media:

    Patent

    Type of material:

    Electronic Resource

    Language:

    Korean

    Classification:

    IPC:  C23F Nichtmechanisches Entfernen metallischer Stoffe von Oberflächen , NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACES / C04B Kalk , LIME / H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES

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