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- IZO INDIUM ZINC OXIDE IZO BASED SPUTTERING TARGET AND METHOD FOR PRODUCING SAME
The disclosed sputtering target is a sputtering target composed of In, Zn, and O, and an atomic ratio of Zn and In satisfies 0.05 <= Zn/(In + Zn) <= 0.30. Moreover, according to the present invention, standard deviation of bulk resistivity on the sputtering surface of the target is equal to or less than 0.1 mΩ·cm. The present invention provides a manufacturing method of an indium oxide-zinc oxide-based oxide (IZO) sintered body target, which has less warpage of a sintered body and wherein in-plane deviation of the bulk resistivity rate due to grinding for reducing the warpage is suppressed.
In, Zn, O 로 이루어지는 스퍼터링 타깃으로서, Zn 과 In 의 원자비가 0.05 ≤ Zn/(In ＋ Zn) ≤ 0.30 을 만족시키고, 그 타깃의 스퍼터 면에 있어서의 벌크 저항률의 표준 편차가 0.1 mΩ·㎝ 이하인 것을 특징으로 하는 스퍼터링 타깃. 소결체의 휨이 적고, 휨 저감을 위한 연삭에 의한 벌크 저항률의 면내 편차가 억제된 산화인듐-산화아연계 산화물 (IZO) 소결체 타깃의 제조 방법을 제공한다.
- IZO INDIUM ZINC OXIDE IZO BASED SPUTTERING TARGET AND METHOD FOR PRODUCING SAME
The disclosed sputtering target is a sputtering target composed of In, Zn, and O, and an atomic ratio of Zn and In satisfies 0.05 <= Zn/(In + Zn) <= 0.30. Moreover, according to the present invention, standard deviation of bulk resistivity on the sputtering surface of the target is equal to or less than 0.1 mΩ·cm. The present invention provides a manufacturing method of an indium oxide-zinc oxide-based oxide (IZO) sintered body target, which has less warpage of a sintered body and wherein in-plane deviation of the bulk resistivity rate due to grinding for reducing the warpage is suppressed.
In, Zn, O 로 이루어지는 스퍼터링 타깃으로서, Zn 과 In 의 원자비가 0.05 ≤ Zn/(In ＋ Zn) ≤ 0.30 을 만족시키고, 그 타깃의 스퍼터 면에 있어서의 벌크 저항률의 표준 편차가 0.1 mΩ·㎝ 이하인 것을 특징으로 하는 스퍼터링 타깃. 소결체의 휨이 적고, 휨 저감을 위한 연삭에 의한 벌크 저항률의 면내 편차가 억제된 산화인듐-산화아연계 산화물 (IZO) 소결체 타깃의 제조 방법을 제공한다.
- IZO INDIUM ZINC OXIDE IZO BASED SPUTTERING TARGET AND METHOD FOR PRODUCING SAME
산화인듐-산화아연계 (IZO) 스퍼터링 타깃 및 그 제조 방법
KAKENO TAKASHI (author)
2020-02-24
Patent
Electronic Resource
Korean
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