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Indium oxide-zinc oxide (izo) sputtering target and method for producing same
The present invention relates to an indium oxide-zinc oxide (IZO)-based sputtering target and a method for manufacturing the same. This sputtering target contains In, Zn, and O, and is characterized in that the atomic ratio of Zn and In satisfies 0.05 < = Zn/(In + Zn) < = 0.30, and the standard deviation of the bulk resistivity in the sputtering surface of the target is 1.0 m [Omega] cm or less. Provided is a method for producing an indium oxide-zinc oxide-based oxide (IZO) sintered body target in which warpage of a sintered body is reduced and in-plane variation in bulk resistivity caused by grinding for reducing warpage is suppressed.
本发明涉及一种氧化铟‑氧化锌类(IZO)溅射靶及其制造方法。一种溅射靶,其为包含In、Zn、O的溅射靶,其特征在于,Zn和In的原子比满足0.05≤Zn/(In+Zn)≤0.30,并且该靶的溅射面内的体电阻率的标准偏差为1.0mΩ·cm以下。本发明提供一种烧结体的翘曲小、并且抑制了由用于减小翘曲的磨削造成的体电阻率的面内偏差的氧化铟‑氧化锌类氧化物(IZO)烧结体靶的制造方法。
Indium oxide-zinc oxide (izo) sputtering target and method for producing same
The present invention relates to an indium oxide-zinc oxide (IZO)-based sputtering target and a method for manufacturing the same. This sputtering target contains In, Zn, and O, and is characterized in that the atomic ratio of Zn and In satisfies 0.05 < = Zn/(In + Zn) < = 0.30, and the standard deviation of the bulk resistivity in the sputtering surface of the target is 1.0 m [Omega] cm or less. Provided is a method for producing an indium oxide-zinc oxide-based oxide (IZO) sintered body target in which warpage of a sintered body is reduced and in-plane variation in bulk resistivity caused by grinding for reducing warpage is suppressed.
本发明涉及一种氧化铟‑氧化锌类(IZO)溅射靶及其制造方法。一种溅射靶,其为包含In、Zn、O的溅射靶,其特征在于,Zn和In的原子比满足0.05≤Zn/(In+Zn)≤0.30,并且该靶的溅射面内的体电阻率的标准偏差为1.0mΩ·cm以下。本发明提供一种烧结体的翘曲小、并且抑制了由用于减小翘曲的磨削造成的体电阻率的面内偏差的氧化铟‑氧化锌类氧化物(IZO)烧结体靶的制造方法。
Indium oxide-zinc oxide (izo) sputtering target and method for producing same
氧化铟-氧化锌类(IZO)溅射靶及其制造方法
KAKENO TAKASHI (author)
2022-07-15
Patent
Electronic Resource
Chinese
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