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Manufacturing method of high-frequency dielectric and a high-frequency dielectric device manufactured using the method
The present invention relates to a high-frequency dielectric manufacturing method and a high-frequency dielectric device manufactured using the method and, specifically, to a high-frequency dielectric manufacturing method for manufacturing a Zr_(1-x)Sn_xTiO_4 (hereinafter ZST) dielectric through a non-calcining process by substituting Sn^(4+) at the Zr^(4+) site in a ZrTiO_4 composition and a high-frequency dielectric device manufactured using the method. Also, the present invention provides a high-frequency dielectric manufacturing method and a high-frequency dielectric device manufactured using the method, wherein the method comprises: (A) a step of mixing zirconium oxide (ZrO_2), titanium oxide (TiO_2), tin oxide (SnO_2), and a sintering additive; and (B) a step of sintering a molded mixture. Accordingly, the present invention has the advantages of maintaining dielectric properties while minimizing process steps and reducing costs.
본 발명은 고주파 유전체 제조 방법 및 그 방법을 이용하여 제조된 고주파 유전체 기기에 관한 것으로, 특히 ZrTiO4조성에서 Zr4+자리에 Sn4+을 치환하고 무하소 공정을 통해서 Zr1-xSnxTiO4 (이하 ZST) 유전체를 제조하는 고주파 유전체 제조 방법 및 그 방법을 이용하여 제조된 고주파 유전체 기기에 관한 것이다. 또한, 본 발명은 (A)산화지르코늄(ZrO2), 산화티탄(TiO2), 산화주석(SnO2), 소결 첨가제를 혼합하는 단계; 및 (B) 성형된 혼합물을 소결 처리하는 단계를 포함하는 고주파 유전체 제조 방법 및 그 방법을 이용하여 제조된 고주파 유전체 기기가 제공된다.
Manufacturing method of high-frequency dielectric and a high-frequency dielectric device manufactured using the method
The present invention relates to a high-frequency dielectric manufacturing method and a high-frequency dielectric device manufactured using the method and, specifically, to a high-frequency dielectric manufacturing method for manufacturing a Zr_(1-x)Sn_xTiO_4 (hereinafter ZST) dielectric through a non-calcining process by substituting Sn^(4+) at the Zr^(4+) site in a ZrTiO_4 composition and a high-frequency dielectric device manufactured using the method. Also, the present invention provides a high-frequency dielectric manufacturing method and a high-frequency dielectric device manufactured using the method, wherein the method comprises: (A) a step of mixing zirconium oxide (ZrO_2), titanium oxide (TiO_2), tin oxide (SnO_2), and a sintering additive; and (B) a step of sintering a molded mixture. Accordingly, the present invention has the advantages of maintaining dielectric properties while minimizing process steps and reducing costs.
본 발명은 고주파 유전체 제조 방법 및 그 방법을 이용하여 제조된 고주파 유전체 기기에 관한 것으로, 특히 ZrTiO4조성에서 Zr4+자리에 Sn4+을 치환하고 무하소 공정을 통해서 Zr1-xSnxTiO4 (이하 ZST) 유전체를 제조하는 고주파 유전체 제조 방법 및 그 방법을 이용하여 제조된 고주파 유전체 기기에 관한 것이다. 또한, 본 발명은 (A)산화지르코늄(ZrO2), 산화티탄(TiO2), 산화주석(SnO2), 소결 첨가제를 혼합하는 단계; 및 (B) 성형된 혼합물을 소결 처리하는 단계를 포함하는 고주파 유전체 제조 방법 및 그 방법을 이용하여 제조된 고주파 유전체 기기가 제공된다.
Manufacturing method of high-frequency dielectric and a high-frequency dielectric device manufactured using the method
고주파 유전체 제조 방법 및 그 방법을 이용하여 제조된 고주파 유전체 기기
NOH SEUNG HYUN (author) / KIM EUNG SOO (author) / PARK YUN SIK (author) / JO HYEON WOO (author)
2020-12-03
Patent
Electronic Resource
Korean
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