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A platform for research: civil engineering, architecture and urbanism
ALUMINUM NITRIDE SINTERED BODY METHOD OF MAKING THE SAME AND SEMICONDUCTOR MANUFACTURING EQUIPMENT COMPONENT USING ALUMINUM NITRIDE SINTERED BODY
The present invention provides an aluminum nitride sintered body capable of suppressing color unevenness. The aluminum nitride sintered body is used in a semiconductor manufacturing apparatus, in which, in a wavelength range of 350 to 700 nm of the photoluminescence spectrum by excitation light by the wavelength of 250 nm of the aluminum nitride sintered body, the highest emission intensity peak by the aluminum nitride sintered body appears in the wavelength range of 580 to 620 nm.
(과제) 색 불균일을 억제시킬 수 있는 질화알루미늄 소결체를 제공한다. (해결 수단) 반도체 제조 장치에 사용되는 질화알루미늄 소결체로서, 질화알루미늄 소결체의 250 ㎚ 의 파장의 여기광에 의한 포토루미네선스 스펙트럼의 350 ㎚ ∼ 700 ㎚ 의 파장 범위에 있어서, 질화알루미늄 소결체에 의한 최고 발광 강도 피크가 580 ㎚ ∼ 620 ㎚ 인 파장 범위에 출현한다.
ALUMINUM NITRIDE SINTERED BODY METHOD OF MAKING THE SAME AND SEMICONDUCTOR MANUFACTURING EQUIPMENT COMPONENT USING ALUMINUM NITRIDE SINTERED BODY
The present invention provides an aluminum nitride sintered body capable of suppressing color unevenness. The aluminum nitride sintered body is used in a semiconductor manufacturing apparatus, in which, in a wavelength range of 350 to 700 nm of the photoluminescence spectrum by excitation light by the wavelength of 250 nm of the aluminum nitride sintered body, the highest emission intensity peak by the aluminum nitride sintered body appears in the wavelength range of 580 to 620 nm.
(과제) 색 불균일을 억제시킬 수 있는 질화알루미늄 소결체를 제공한다. (해결 수단) 반도체 제조 장치에 사용되는 질화알루미늄 소결체로서, 질화알루미늄 소결체의 250 ㎚ 의 파장의 여기광에 의한 포토루미네선스 스펙트럼의 350 ㎚ ∼ 700 ㎚ 의 파장 범위에 있어서, 질화알루미늄 소결체에 의한 최고 발광 강도 피크가 580 ㎚ ∼ 620 ㎚ 인 파장 범위에 출현한다.
ALUMINUM NITRIDE SINTERED BODY METHOD OF MAKING THE SAME AND SEMICONDUCTOR MANUFACTURING EQUIPMENT COMPONENT USING ALUMINUM NITRIDE SINTERED BODY
질화알루미늄 소결체, 그 제조 방법, 및 질화알루미늄 소결체를 사용한 반도체 제조 장치용 부품
NARUSE NORIYUKI (author)
2021-01-27
Patent
Electronic Resource
Korean
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