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ALUMINUM NITRIDE SINTERED BODY, METHOD OF MAKING THE SAME, AND SEMICONDUCTOR MANUFACTURING EQUIPMENT COMPONENT USING ALUMINUM NITRIDE SINTERED BODY
An aluminum nitride sintered body for use in a semiconductor manufacturing apparatus is provided. The aluminum nitride sintered body exhibits, in a photoluminescence spectrum thereof in a wavelength range of 350 nm to 700 nm obtained with 250 nm excitation light, a highest emission intensity peak within a wavelength range of 580 nm to 620 nm.
ALUMINUM NITRIDE SINTERED BODY, METHOD OF MAKING THE SAME, AND SEMICONDUCTOR MANUFACTURING EQUIPMENT COMPONENT USING ALUMINUM NITRIDE SINTERED BODY
An aluminum nitride sintered body for use in a semiconductor manufacturing apparatus is provided. The aluminum nitride sintered body exhibits, in a photoluminescence spectrum thereof in a wavelength range of 350 nm to 700 nm obtained with 250 nm excitation light, a highest emission intensity peak within a wavelength range of 580 nm to 620 nm.
ALUMINUM NITRIDE SINTERED BODY, METHOD OF MAKING THE SAME, AND SEMICONDUCTOR MANUFACTURING EQUIPMENT COMPONENT USING ALUMINUM NITRIDE SINTERED BODY
NARUSE NORIYUKI (author)
2021-01-21
Patent
Electronic Resource
English
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