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Oriented alumina substrate for epitaxial growth
An oriented alumina substrate for epitaxial growth according to an embodiment of the present invention includes crystalline grains constituting a surface thereof, the crystalline grains having a tilt angle of 1° or more and 3° or less and an average sintered grain size of 20 μm or more.
Oriented alumina substrate for epitaxial growth
An oriented alumina substrate for epitaxial growth according to an embodiment of the present invention includes crystalline grains constituting a surface thereof, the crystalline grains having a tilt angle of 1° or more and 3° or less and an average sintered grain size of 20 μm or more.
Oriented alumina substrate for epitaxial growth
WATANABE MORIMICHI (author) / SATO KEI (author) / MATSUSHIMA KIYOSHI (author) / NANATAKI TSUTOMU (author)
2019-10-08
Patent
Electronic Resource
English
IPC:
C30B
SINGLE-CRYSTAL GROWTH
,
Züchten von Einkristallen
/
C01F
COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
,
Verbindungen der Metalle Beryllium, Magnesium, Aluminium, Calcium, Strontium, Barium, Radium, Thorium oder der Seltenen Erden
/
C04B
Kalk
,
LIME
/
H01L
Halbleiterbauelemente
,
SEMICONDUCTOR DEVICES
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Epitaxial growth of PbTe film on Si substrate
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