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    Heat-sink-attached power-module substrate and power module

    New search for: OOHIRAKI TOMOYA
    New search for: OI SOTARO

    Provided is a heat-sink-attached power-module substrate, in which a metal layer and first layers are formed from aluminum sheets having a purity of 99.99 mass % or greater and a heat sink and second layers are formed from aluminum sheets having a purity lower than that of the metal layer and the first layers: when a thickness is t1 (mm), a joined-surface area is A1 (mm2), yield strength at 25° C. is σ11 (N/mm2), yield strength at 200° C. is σ12 (N/mm2) in the second layers; a thickness is t2 (mm), a joined-surface area is A2 (mm2), yield strength at 25° C. is σ21 (N/mm2), and yield strength at 200° C. is σ22 (N/mm2) in the heat sink.

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    Heat-sink-attached power-module substrate and power module

    New search for: OOHIRAKI TOMOYA
    New search for: OI SOTARO

    Provided is a heat-sink-attached power-module substrate, in which a metal layer and first layers are formed from aluminum sheets having a purity of 99.99 mass % or greater and a heat sink and second layers are formed from aluminum sheets having a purity lower than that of the metal layer and the first layers: when a thickness is t1 (mm), a joined-surface area is A1 (mm2), yield strength at 25° C. is σ11 (N/mm2), yield strength at 200° C. is σ12 (N/mm2) in the second layers; a thickness is t2 (mm), a joined-surface area is A2 (mm2), yield strength at 25° C. is σ21 (N/mm2), and yield strength at 200° C. is σ22 (N/mm2) in the heat sink.

    Access

    Download

    Heat-sink-attached power-module substrate and power module

    New search for: OOHIRAKI TOMOYA
    New search for: OI SOTARO

    Provided is a heat-sink-attached power-module substrate, in which a metal layer and first layers are formed from aluminum sheets having a purity of 99.99 mass % or greater and a heat sink and second layers are formed from aluminum sheets having a purity lower than that of the metal layer and the first layers: when a thickness is t1 (mm), a joined-surface area is A1 (mm2), yield strength at 25° C. is σ11 (N/mm2), yield strength at 200° C. is σ12 (N/mm2) in the second layers; a thickness is t2 (mm), a joined-surface area is A2 (mm2), yield strength at 25° C. is σ21 (N/mm2), and yield strength at 200° C. is σ22 (N/mm2) in the heat sink.

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    Title:

    Heat-sink-attached power-module substrate and power module

    Contributors:

    OOHIRAKI TOMOYA (author) / OI SOTARO (author)

    Publication date:

    2019-10-22

    Type of media:

    Patent

    Type of material:

    Electronic Resource

    Language:

    English

    Classification:

    IPC:  H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES / C04B Kalk , LIME / F28F Einzelheiten von Wärmetauschern oder Wärmeübertragungsvorrichtungen für allgemeine Verwendung , DETAILS OF HEAT-EXCHANGE OR HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION

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