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    Heat-sink-attached power-module substrate and power module

    Neue Suche nach: OOHIRAKI TOMOYA
    Neue Suche nach: OI SOTARO

    Provided is a heat-sink-attached power-module substrate, in which a metal layer and first layers are formed from aluminum sheets having a purity of 99.99 mass % or greater and a heat sink and second layers are formed from aluminum sheets having a purity lower than that of the metal layer and the first layers: when a thickness is t1 (mm), a joined-surface area is A1 (mm2), yield strength at 25° C. is σ11 (N/mm2), yield strength at 200° C. is σ12 (N/mm2) in the second layers; a thickness is t2 (mm), a joined-surface area is A2 (mm2), yield strength at 25° C. is σ21 (N/mm2), and yield strength at 200° C. is σ22 (N/mm2) in the heat sink.

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    Heat-sink-attached power-module substrate and power module

    Neue Suche nach: OOHIRAKI TOMOYA
    Neue Suche nach: OI SOTARO

    Provided is a heat-sink-attached power-module substrate, in which a metal layer and first layers are formed from aluminum sheets having a purity of 99.99 mass % or greater and a heat sink and second layers are formed from aluminum sheets having a purity lower than that of the metal layer and the first layers: when a thickness is t1 (mm), a joined-surface area is A1 (mm2), yield strength at 25° C. is σ11 (N/mm2), yield strength at 200° C. is σ12 (N/mm2) in the second layers; a thickness is t2 (mm), a joined-surface area is A2 (mm2), yield strength at 25° C. is σ21 (N/mm2), and yield strength at 200° C. is σ22 (N/mm2) in the heat sink.

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    Heat-sink-attached power-module substrate and power module

    Neue Suche nach: OOHIRAKI TOMOYA
    Neue Suche nach: OI SOTARO

    Provided is a heat-sink-attached power-module substrate, in which a metal layer and first layers are formed from aluminum sheets having a purity of 99.99 mass % or greater and a heat sink and second layers are formed from aluminum sheets having a purity lower than that of the metal layer and the first layers: when a thickness is t1 (mm), a joined-surface area is A1 (mm2), yield strength at 25° C. is σ11 (N/mm2), yield strength at 200° C. is σ12 (N/mm2) in the second layers; a thickness is t2 (mm), a joined-surface area is A2 (mm2), yield strength at 25° C. is σ21 (N/mm2), and yield strength at 200° C. is σ22 (N/mm2) in the heat sink.

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    Titel:

    Heat-sink-attached power-module substrate and power module

    Beteiligte:

    OOHIRAKI TOMOYA (Autor:in) / OI SOTARO (Autor:in)

    Erscheinungsdatum:

    22.10.2019

    Medientyp:

    Patent

    Format:

    Elektronische Ressource

    Sprache:

    Englisch

    Klassifikation:

    IPC:  H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES / C04B Kalk , LIME / F28F Einzelheiten von Wärmetauschern oder Wärmeübertragungsvorrichtungen für allgemeine Verwendung , DETAILS OF HEAT-EXCHANGE OR HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION

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