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Heat sink formed from a high pipe density silicon carbide substrate
Some embodiments may include a porous silicon carbide substrate plugged with dielectric material, the porous silicon carbide substrate including a first side to couple to a heat source and a second side to couple to an electrically conductive surface, wherein the second side is opposite the first side; wherein in the case that an opening on the area of the first side forms a channel with an opening on an area of the second side, a portion of the dielectric material located in the channel is arranged to prevent an electrical short from forming through the porous silicon carbide substrate to the electrically conductive surface. In some examples, the heat source may be one or more semiconductor laser diode chips. Other embodiments may be disclosed and/or claimed.
Heat sink formed from a high pipe density silicon carbide substrate
Some embodiments may include a porous silicon carbide substrate plugged with dielectric material, the porous silicon carbide substrate including a first side to couple to a heat source and a second side to couple to an electrically conductive surface, wherein the second side is opposite the first side; wherein in the case that an opening on the area of the first side forms a channel with an opening on an area of the second side, a portion of the dielectric material located in the channel is arranged to prevent an electrical short from forming through the porous silicon carbide substrate to the electrically conductive surface. In some examples, the heat source may be one or more semiconductor laser diode chips. Other embodiments may be disclosed and/or claimed.
Heat sink formed from a high pipe density silicon carbide substrate
ABSHERE TRAVIS ARTHUR (author)
2021-08-10
Patent
Electronic Resource
English
HEAT SINK FORMED FROM A HIGH PIPE DENSITY SILICON CARBIDE SUBSTRATE
European Patent Office | 2020
|European Patent Office | 2016
|European Patent Office | 2021
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