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    Composite structure and semiconductor manufacturing apparatus including composite structure

    New search for: ASHIZAWA HIROAKI
    New search for: TAKIZAWA RYOTO

    Disclosed is to provide a composite structure used as a member for a semiconductor manufacturing apparatus with which low-particle generation can be improved, as well as a semiconductor manufacturing apparatus including the same. A composite structure including a base material and a structure that is provided on the base material and has a surface, in which the structure comprises Y3Al5O12 as a main component, and has an indentation hardness being larger than 8.5 GPa features excellent low-particle generation and is suitably used as a member for a semiconductor apparatus.

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    Composite structure and semiconductor manufacturing apparatus including composite structure

    New search for: ASHIZAWA HIROAKI
    New search for: TAKIZAWA RYOTO

    Disclosed is to provide a composite structure used as a member for a semiconductor manufacturing apparatus with which low-particle generation can be improved, as well as a semiconductor manufacturing apparatus including the same. A composite structure including a base material and a structure that is provided on the base material and has a surface, in which the structure comprises Y3Al5O12 as a main component, and has an indentation hardness being larger than 8.5 GPa features excellent low-particle generation and is suitably used as a member for a semiconductor apparatus.

    Access

    Download

    Composite structure and semiconductor manufacturing apparatus including composite structure

    New search for: ASHIZAWA HIROAKI
    New search for: TAKIZAWA RYOTO

    Disclosed is to provide a composite structure used as a member for a semiconductor manufacturing apparatus with which low-particle generation can be improved, as well as a semiconductor manufacturing apparatus including the same. A composite structure including a base material and a structure that is provided on the base material and has a surface, in which the structure comprises Y3Al5O12 as a main component, and has an indentation hardness being larger than 8.5 GPa features excellent low-particle generation and is suitably used as a member for a semiconductor apparatus.

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    Document information
    Title:

    Composite structure and semiconductor manufacturing apparatus including composite structure

    Contributors:

    ASHIZAWA HIROAKI (author) / TAKIZAWA RYOTO (author)

    Publication date:

    2023-10-31

    Type of media:

    Patent

    Type of material:

    Electronic Resource

    Language:

    English

    Classification:

    IPC:  C04B Kalk , LIME / B82Y Bestimmter Gebrauch oder bestimmte Anwendung von Nanostrukturen , SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES / H01J Elektrische Entladungsröhren oder Entladungslampen , ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS

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