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Tunnel junction selector MRAM
A magnetoresistive random access memory (MRAM) cell includes a bottom electrode, a magnetic tunnel junction structure, a bipolar tunnel junction selector; and a top electrode. The tunnel junction selector includes a MgO tunnel barrier layer and provides a bipolar function for putting the MTJ structure in parallel or anti-parallel mode.
Tunnel junction selector MRAM
A magnetoresistive random access memory (MRAM) cell includes a bottom electrode, a magnetic tunnel junction structure, a bipolar tunnel junction selector; and a top electrode. The tunnel junction selector includes a MgO tunnel barrier layer and provides a bipolar function for putting the MTJ structure in parallel or anti-parallel mode.
Tunnel junction selector MRAM
MANFRINI MAURICIO (author) / WONG HON-SUM PHILIP (author)
2024-11-12
Patent
Electronic Resource
English
Magnetic tunnel junction (MTJ) and magnetic tunnel junction (MTJ) array
| European Patent Office | 2023
| TIBKAT | Nachgewiesen 12.1994(1993)-18.2000; 2001-2016 ; damit Erscheinen eingestellt