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A platform for research: civil engineering, architecture and urbanism
SINTERED OXIDE, SPUTTERING TARGET, AND OXIDE SEMICONDUCTOR THIN FILM OBTAINED USING SPUTTERING TARGET
An oxide sintered body which, when made into an oxide semiconductor thin film by sputtering, can achieve low carrier density and high carrier mobility, and a sputtering target using said oxide sintered body are provided. This oxide sintered body contains indium and gallium as oxides, contains nitrogen, and does not contain zinc. The gallium content in terms of the atomic ratio Ga/(In+Ga) is at least 0.005 but less than 0.20, and substantially no GaN phase is included. Furthermore, the sintered oxide preferably has no Ga2O3 phase. A crystalline oxide semiconductor thin film formed using this oxide sintered body as a sputtering target yields a carrier density of 1.0×1018 cm−3 or less, and a carrier mobility of 10 cm2V−1sec−1 or more.
SINTERED OXIDE, SPUTTERING TARGET, AND OXIDE SEMICONDUCTOR THIN FILM OBTAINED USING SPUTTERING TARGET
An oxide sintered body which, when made into an oxide semiconductor thin film by sputtering, can achieve low carrier density and high carrier mobility, and a sputtering target using said oxide sintered body are provided. This oxide sintered body contains indium and gallium as oxides, contains nitrogen, and does not contain zinc. The gallium content in terms of the atomic ratio Ga/(In+Ga) is at least 0.005 but less than 0.20, and substantially no GaN phase is included. Furthermore, the sintered oxide preferably has no Ga2O3 phase. A crystalline oxide semiconductor thin film formed using this oxide sintered body as a sputtering target yields a carrier density of 1.0×1018 cm−3 or less, and a carrier mobility of 10 cm2V−1sec−1 or more.
SINTERED OXIDE, SPUTTERING TARGET, AND OXIDE SEMICONDUCTOR THIN FILM OBTAINED USING SPUTTERING TARGET
NAKAYAMA TOKUYUKI (author) / NISHIMURA EIICHIRO (author) / IWARA MASASHI (author)
2017-03-16
Patent
Electronic Resource
English
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