A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
HEAT-REACTIVE RESIST MATERIAL, MOLD MANUFACTURING METHOD, MOLD, DEVELOPMENT METHOD AND PATTERN FORMATION MATERIAL
A heat-reactive resist material contains copper oxide, and silicon or silicon oxide, and is formed so that the content of silicon or silicon oxide in the heat-reactive resist material is 4.0 mol % or more less than 10.0 mol % in terms of mole of silicon. A heat-reactive resist layer is formed using the heat-reactive resist material, is exposed, and then, is developed with a developing solution. Using the obtained heat-reactive resist layer as a mask, dry etching is performed on a substrate with a fluorocarbon to manufacture a mold having a concavo-convex shape on the substrate surface. At this point, it is possible to control a fine pattern comprised of the concavo-convex shape.
HEAT-REACTIVE RESIST MATERIAL, MOLD MANUFACTURING METHOD, MOLD, DEVELOPMENT METHOD AND PATTERN FORMATION MATERIAL
A heat-reactive resist material contains copper oxide, and silicon or silicon oxide, and is formed so that the content of silicon or silicon oxide in the heat-reactive resist material is 4.0 mol % or more less than 10.0 mol % in terms of mole of silicon. A heat-reactive resist layer is formed using the heat-reactive resist material, is exposed, and then, is developed with a developing solution. Using the obtained heat-reactive resist layer as a mask, dry etching is performed on a substrate with a fluorocarbon to manufacture a mold having a concavo-convex shape on the substrate surface. At this point, it is possible to control a fine pattern comprised of the concavo-convex shape.
HEAT-REACTIVE RESIST MATERIAL, MOLD MANUFACTURING METHOD, MOLD, DEVELOPMENT METHOD AND PATTERN FORMATION MATERIAL
MITAMURA YOSHIMICHI (author) / NAKATA TAKUTO (author)
2018-11-01
Patent
Electronic Resource
English
IPC:
G03F
Fotomechanische Herstellung strukturierter oder gemusterter Oberflächen, z.B. zum Drucken, zum Herstellen von Halbleiterbauelementen
,
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
/
B29C
Formen oder Verbinden von Kunststoffen
,
SHAPING OR JOINING OF PLASTICS
/
B82Y
Bestimmter Gebrauch oder bestimmte Anwendung von Nanostrukturen
,
SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
/
C04B
Kalk
,
LIME
/
G11B
Informationsspeicherung mit Relativbewegung zwischen Aufzeichnungsträger und Wandler
,
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
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