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GARNET COMPOUND, OXIDE SINTERED COMPACT, OXIDE SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR, ELECTRONIC DEVICE AND IMAGE SENSOR
where In, Y, Ga, and Al in the formulae represent the number of atoms of the In element, Y element, Ga element, and Al element in the sintered oxide, respectively.
GARNET COMPOUND, OXIDE SINTERED COMPACT, OXIDE SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR, ELECTRONIC DEVICE AND IMAGE SENSOR
where In, Y, Ga, and Al in the formulae represent the number of atoms of the In element, Y element, Ga element, and Al element in the sintered oxide, respectively.
GARNET COMPOUND, OXIDE SINTERED COMPACT, OXIDE SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR, ELECTRONIC DEVICE AND IMAGE SENSOR
INOUE KAZUYOSHI (author) / SHIBATA MASATOSHI (author) / KAWASHIMA EMI (author) / TSURUMA YUKI (author) / TOMAI SHIGEKAZU (author)
2020-05-07
Patent
Electronic Resource
English
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