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A platform for research: civil engineering, architecture and urbanism
GARNET COMPOUND, OXIDE SINTERED COMPACT, OXIDE SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR, ELECTRONIC DEVICE AND IMAGE SENSOR
A sintered oxide contains In element, Y element, and Ga element at respective atomic ratios as defined in formulae (1) to (3) below,0.80≤In/(In+Y+Ga)≤0.96 (1),0.02≤Y/(In+Y+Ga)≤0.10 (2), and0.02≤Ga/(In+Y+Ga)≤0.10 (3), andAl element at an atomic ratio as defined in a formula (4) below,0.005≤Al/(In+Y+Ga+Al)≤0.07 (4),where In, Y, Ga, and Al in the formulae represent the number of atoms of the In element, Y element, Ga element, and Al element in the sintered oxide, respectively.
GARNET COMPOUND, OXIDE SINTERED COMPACT, OXIDE SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR, ELECTRONIC DEVICE AND IMAGE SENSOR
A sintered oxide contains In element, Y element, and Ga element at respective atomic ratios as defined in formulae (1) to (3) below,0.80≤In/(In+Y+Ga)≤0.96 (1),0.02≤Y/(In+Y+Ga)≤0.10 (2), and0.02≤Ga/(In+Y+Ga)≤0.10 (3), andAl element at an atomic ratio as defined in a formula (4) below,0.005≤Al/(In+Y+Ga+Al)≤0.07 (4),where In, Y, Ga, and Al in the formulae represent the number of atoms of the In element, Y element, Ga element, and Al element in the sintered oxide, respectively.
GARNET COMPOUND, OXIDE SINTERED COMPACT, OXIDE SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR, ELECTRONIC DEVICE AND IMAGE SENSOR
INOUE KAZUYOSHI (author) / SHIBATA MASATOSHI (author) / KAWASHIMA EMI (author) / TSURUMA YUKI (author) / TOMAI SHIGEKAZU (author)
2022-12-08
Patent
Electronic Resource
English
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