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    GARNET COMPOUND, OXIDE SINTERED COMPACT, OXIDE SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR, ELECTRONIC DEVICE AND IMAGE SENSOR

    Neue Suche nach: INOUE KAZUYOSHI
    Neue Suche nach: SHIBATA MASATOSHI
    Neue Suche nach: KAWASHIMA EMI
    Neue Suche nach: TSURUMA YUKI
    Neue Suche nach: TOMAI SHIGEKAZU

    where In, Y, Ga, and Al in the formulae represent the number of atoms of the In element, Y element, Ga element, and Al element in the sintered oxide, respectively.

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    GARNET COMPOUND, OXIDE SINTERED COMPACT, OXIDE SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR, ELECTRONIC DEVICE AND IMAGE SENSOR

    Neue Suche nach: INOUE KAZUYOSHI
    Neue Suche nach: SHIBATA MASATOSHI
    Neue Suche nach: KAWASHIMA EMI
    Neue Suche nach: TSURUMA YUKI
    Neue Suche nach: TOMAI SHIGEKAZU

    where In, Y, Ga, and Al in the formulae represent the number of atoms of the In element, Y element, Ga element, and Al element in the sintered oxide, respectively.

    Zugriff

    Download

    GARNET COMPOUND, OXIDE SINTERED COMPACT, OXIDE SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR, ELECTRONIC DEVICE AND IMAGE SENSOR

    Neue Suche nach: INOUE KAZUYOSHI
    Neue Suche nach: SHIBATA MASATOSHI
    Neue Suche nach: KAWASHIMA EMI
    Neue Suche nach: TSURUMA YUKI
    Neue Suche nach: TOMAI SHIGEKAZU

    where In, Y, Ga, and Al in the formulae represent the number of atoms of the In element, Y element, Ga element, and Al element in the sintered oxide, respectively.

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    Titel:

    GARNET COMPOUND, OXIDE SINTERED COMPACT, OXIDE SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR, ELECTRONIC DEVICE AND IMAGE SENSOR

    Beteiligte:

    INOUE KAZUYOSHI (Autor:in) / SHIBATA MASATOSHI (Autor:in) / KAWASHIMA EMI (Autor:in) / TSURUMA YUKI (Autor:in) / TOMAI SHIGEKAZU (Autor:in)

    Erscheinungsdatum:

    07.05.2020

    Medientyp:

    Patent

    Format:

    Elektronische Ressource

    Sprache:

    Englisch

    Klassifikation:

    IPC:  C04B Kalk , LIME / C23C Beschichten metallischer Werkstoffe , COATING METALLIC MATERIAL / H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES

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