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NITRIDE PIEZOELECTRIC BODY AND MEMS DEVICE USING SAME
Provide are a nitride piezoelectric body having a value indicating a performance index (at least any one of d33, g33, and K2) higher than that of aluminum nitride not doped with any element, and a MEMS device using the same. The nitride piezoelectric body is a piezoelectric body represented by chemical formula Al1-X-YMgXTaYN, wherein X+Y is less than 1, X is in a range of more than 0 and less than 1, and Y is in a range of more than 0 and less than 1, and Ta includes tetravalent tantalum.
NITRIDE PIEZOELECTRIC BODY AND MEMS DEVICE USING SAME
Provide are a nitride piezoelectric body having a value indicating a performance index (at least any one of d33, g33, and K2) higher than that of aluminum nitride not doped with any element, and a MEMS device using the same. The nitride piezoelectric body is a piezoelectric body represented by chemical formula Al1-X-YMgXTaYN, wherein X+Y is less than 1, X is in a range of more than 0 and less than 1, and Y is in a range of more than 0 and less than 1, and Ta includes tetravalent tantalum.
NITRIDE PIEZOELECTRIC BODY AND MEMS DEVICE USING SAME
ANGGRAINI SRI AYU (author) / AKIYAMA MORITO (author) / UEHARA MASATO (author) / YAMADA HIROSHI (author) / HIRATA KENJI (author)
2022-09-01
Patent
Electronic Resource
English
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