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YTTRIUM OXIDE-BASED SINTERED BODY, PRODUCTION METHOD THEREFOR, AND MEMBER FOR SEMICONDUCTOR PRODUCTION APPARATUS
An yttrium oxide-based sintered body includes yttrium oxide as a predominant component. The sintered body includes aluminum in an amount of 0.1 mass % to 0.5 mass % inclusive as reduced to aluminum oxide, has a metal content of 1,000 ppm or less, the metal excluding yttrium and aluminum, and has a relative density of 98% or higher. By virtue of the yttrium oxide-based sintered body, a plasma resistance comparable to that of a high-purity (99.9%) yttrium oxide sintered body can be achieved. Also, since the relative density is sufficiently high, plasma resistance can be enhanced. As a result, the yttrium oxide-based sintered body can be suitably used as a large-scale member by virtue of excellent mechanical strength.
YTTRIUM OXIDE-BASED SINTERED BODY, PRODUCTION METHOD THEREFOR, AND MEMBER FOR SEMICONDUCTOR PRODUCTION APPARATUS
An yttrium oxide-based sintered body includes yttrium oxide as a predominant component. The sintered body includes aluminum in an amount of 0.1 mass % to 0.5 mass % inclusive as reduced to aluminum oxide, has a metal content of 1,000 ppm or less, the metal excluding yttrium and aluminum, and has a relative density of 98% or higher. By virtue of the yttrium oxide-based sintered body, a plasma resistance comparable to that of a high-purity (99.9%) yttrium oxide sintered body can be achieved. Also, since the relative density is sufficiently high, plasma resistance can be enhanced. As a result, the yttrium oxide-based sintered body can be suitably used as a large-scale member by virtue of excellent mechanical strength.
YTTRIUM OXIDE-BASED SINTERED BODY, PRODUCTION METHOD THEREFOR, AND MEMBER FOR SEMICONDUCTOR PRODUCTION APPARATUS
TAKAHASHI YUKI (author) / TSUTAI YOSHIFUMI (author)
2022-09-29
Patent
Electronic Resource
English
IPC:
C04B
Kalk
,
LIME
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