Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
GARNET COMPOUND, OXIDE SINTERED COMPACT, OXIDE SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR, ELECTRONIC DEVICE AND IMAGE SENSOR
A sintered oxide contains In element, Y element, and Ga element at respective atomic ratios as defined in formulae (1) to (3) below,0.80≤In/(In+Y+Ga)≤0.96 (1),0.02≤Y/(In+Y+Ga)≤0.10 (2), and0.02≤Ga/(In+Y+Ga)≤0.10 (3), andAl element at an atomic ratio as defined in a formula (4) below,0.005≤Al/(In+Y+Ga+Al)≤0.07 (4),where In, Y, Ga, and Al in the formulae represent the number of atoms of the In element, Y element, Ga element, and Al element in the sintered oxide, respectively.
GARNET COMPOUND, OXIDE SINTERED COMPACT, OXIDE SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR, ELECTRONIC DEVICE AND IMAGE SENSOR
A sintered oxide contains In element, Y element, and Ga element at respective atomic ratios as defined in formulae (1) to (3) below,0.80≤In/(In+Y+Ga)≤0.96 (1),0.02≤Y/(In+Y+Ga)≤0.10 (2), and0.02≤Ga/(In+Y+Ga)≤0.10 (3), andAl element at an atomic ratio as defined in a formula (4) below,0.005≤Al/(In+Y+Ga+Al)≤0.07 (4),where In, Y, Ga, and Al in the formulae represent the number of atoms of the In element, Y element, Ga element, and Al element in the sintered oxide, respectively.
GARNET COMPOUND, OXIDE SINTERED COMPACT, OXIDE SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR, ELECTRONIC DEVICE AND IMAGE SENSOR
INOUE KAZUYOSHI (Autor:in) / SHIBATA MASATOSHI (Autor:in) / KAWASHIMA EMI (Autor:in) / TSURUMA YUKI (Autor:in) / TOMAI SHIGEKAZU (Autor:in)
08.12.2022
Patent
Elektronische Ressource
Englisch
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