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Dielectric layer for electrostatic chuck and electrostatic chuck
A dielectric layer for an electrostatic chuck is formed of a ceramic material having a first phase including aluminum oxide and a second phase including composite carbonitride (Ti, Me)(C, N) that contains titanium as fine grains. The Me represents a transition element and metals of Group 4 to Group 6 such as Mo and W. The ceramic material that includes the second phase by 0.05 vol % to 2.5 vol % has a volume resistivity value of about 108 to 1013 (Ω·cm) necessary for a Johnsen-Rahbek type electrostatic chuck.
Dielectric layer for electrostatic chuck and electrostatic chuck
A dielectric layer for an electrostatic chuck is formed of a ceramic material having a first phase including aluminum oxide and a second phase including composite carbonitride (Ti, Me)(C, N) that contains titanium as fine grains. The Me represents a transition element and metals of Group 4 to Group 6 such as Mo and W. The ceramic material that includes the second phase by 0.05 vol % to 2.5 vol % has a volume resistivity value of about 108 to 1013 (Ω·cm) necessary for a Johnsen-Rahbek type electrostatic chuck.
Dielectric layer for electrostatic chuck and electrostatic chuck
TSUTSUMI KOUTA (author) / NAGANO MITSUYOSHI (author) / TAMAGAWA KOKI (author) / SHIRAIWA NORIO (author) / YOSHIKAWA TADAYOSHI (author) / SAITO MIKI (author) / UEHARA TOSHIO (author) / MATSUBARA HIDEAKI (author) / MATSUDA TETSUSHI (author)
2015-09-01
Patent
Electronic Resource
English
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