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Dense composite material, method for producing the same, and component for semiconductor production equipment
A dense composite material of the present invention contains 37% to 60% by mass of silicon carbide grains, also contains titanium silicide, titanium silicon carbide, and titanium carbide, each in an amount smaller than the mass percent of the silicon carbide grains, and has an open porosity of 1% or less. Such a dense composite material is, for example, characterized in that it has an average coefficient of linear thermal expansion at 40° C. to 570° C. of 7.2 to 8.2 ppm/K, a thermal conductivity of 75 W/mK or more, and a 4-point bending strength of 200 MPa or more.
Dense composite material, method for producing the same, and component for semiconductor production equipment
A dense composite material of the present invention contains 37% to 60% by mass of silicon carbide grains, also contains titanium silicide, titanium silicon carbide, and titanium carbide, each in an amount smaller than the mass percent of the silicon carbide grains, and has an open porosity of 1% or less. Such a dense composite material is, for example, characterized in that it has an average coefficient of linear thermal expansion at 40° C. to 570° C. of 7.2 to 8.2 ppm/K, a thermal conductivity of 75 W/mK or more, and a 4-point bending strength of 200 MPa or more.
Dense composite material, method for producing the same, and component for semiconductor production equipment
JINDO ASUMI (author) / INOUE KATSUHIRO (author) / KATSUDA YUJI (author)
2015-11-17
Patent
Electronic Resource
English
IPC:
B32B
LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
,
Schichtkörper, d.h. aus Ebenen oder gewölbten Schichten, z.B. mit zell- oder wabenförmiger Form, aufgebaute Erzeugnisse
/
A61F
FILTERS IMPLANTABLE INTO BLOOD VESSELS
,
Filter in Blutgefäße implantierbar
/
B23K
Löten
,
SOLDERING OR UNSOLDERING
/
C04B
Kalk
,
LIME
/
F28F
Einzelheiten von Wärmetauschern oder Wärmeübertragungsvorrichtungen für allgemeine Verwendung
,
DETAILS OF HEAT-EXCHANGE OR HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
/
H01L
Halbleiterbauelemente
,
SEMICONDUCTOR DEVICES
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