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A crystalline transparent conductive film containing indium oxide as a main component, and cerium, exhibiting low resistance derived from high refractive index and high carrier electron mobility, as well as small surface roughness, which is obtained by film-formation using an ion plating method. In the film, cerium content is 0.3 to 9% by atom, as an atomic number ratio of Ce/(In+Ce); film-formation is made using an ion plating method; and arithmetic average height (Ra) is 1.0 nm or lower. Also the film can contain one or more of titanium, zirconium, hafnium, molybdenum and tungsten, at a content of 1% by atom or lower, as an atomic number ratio of M/(In+Ce+M).
A crystalline transparent conductive film containing indium oxide as a main component, and cerium, exhibiting low resistance derived from high refractive index and high carrier electron mobility, as well as small surface roughness, which is obtained by film-formation using an ion plating method. In the film, cerium content is 0.3 to 9% by atom, as an atomic number ratio of Ce/(In+Ce); film-formation is made using an ion plating method; and arithmetic average height (Ra) is 1.0 nm or lower. Also the film can contain one or more of titanium, zirconium, hafnium, molybdenum and tungsten, at a content of 1% by atom or lower, as an atomic number ratio of M/(In+Ce+M).
Transparent conductive film
NAKAYAMA TOKUYUKI (author)
2016-11-15
Patent
Electronic Resource
English
| European Patent Office | 2017
METHOD OF MANUFACTURING TRANSPARENT CONDUCTIVE FILM, AND TRANSPARENT CONDUCTIVE FILM
| European Patent Office | 2017
| European Patent Office | 2017