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TARGET FOR FORMING TRANSPARENT CONDUCTIVE FILM TRANSPARENT CONDUCTIVE FILM METHOD OF MANUFACTURING TARGET FOR FORMING TRANSPARENT CONDUCTIVE FILM AND METHOD OF MANUFACTURING TRANSPARENT CONDUCTIVE FILM
Provided are a target for forming a transparent conductive film, a transparent conductive film, a method for manufacturing a target for forming a transparent conductive film, and a method for manufacturing a transparent conductive film, wherein the target for forming a transparent conductive film has high relative density and suppresses generation of arc or particles during sputter deposition. The target includes In, Sn, Zn, and O, wherein Sn/(In+Sn+Zn)=7-17 at%, Zn/(In+Sn+Zn)=0.5-12 at%, an atomic number ratio of Sn and Zn is 1.3 or greater, a peak strength ratio (Sn_3In_4O_(12)/In_2O_3) of an Sn_3In_4O_(12) crystal phase to an In_2O_3 crystal phase according to XRD measurement is 0.10 or less, and relative density is 97% or greater.
[과제] 상대 밀도가 높고, 스퍼터 성막 시의 아크나 파티클의 발생을 억제할 수 있는 투명 도전막 형성용 타깃, 투명 도전막, 투명 도전막 형성용 타깃의 제조 방법 및 투명 도전막의 제조 방법을 제공한다. [해결 수단] In, Sn, Zn, O를 포함하고, Sn/(In＋Sn＋Zn)=7~17at%, Zn/(In＋Sn＋Zn)=0.5~12at%, Sn와 Zn의 원자수비(Sn/Zn)가 1.3 이상이며, 또한 XRD 측정에 따른 InO결정상에 대한 SnInO결정상의 피크 강도비(SnInO/InO)가 0.10 이하이고, 상대 밀도가 97% 이상인 투명 도전막 형성용 타깃이다.
TARGET FOR FORMING TRANSPARENT CONDUCTIVE FILM TRANSPARENT CONDUCTIVE FILM METHOD OF MANUFACTURING TARGET FOR FORMING TRANSPARENT CONDUCTIVE FILM AND METHOD OF MANUFACTURING TRANSPARENT CONDUCTIVE FILM
Provided are a target for forming a transparent conductive film, a transparent conductive film, a method for manufacturing a target for forming a transparent conductive film, and a method for manufacturing a transparent conductive film, wherein the target for forming a transparent conductive film has high relative density and suppresses generation of arc or particles during sputter deposition. The target includes In, Sn, Zn, and O, wherein Sn/(In+Sn+Zn)=7-17 at%, Zn/(In+Sn+Zn)=0.5-12 at%, an atomic number ratio of Sn and Zn is 1.3 or greater, a peak strength ratio (Sn_3In_4O_(12)/In_2O_3) of an Sn_3In_4O_(12) crystal phase to an In_2O_3 crystal phase according to XRD measurement is 0.10 or less, and relative density is 97% or greater.
[과제] 상대 밀도가 높고, 스퍼터 성막 시의 아크나 파티클의 발생을 억제할 수 있는 투명 도전막 형성용 타깃, 투명 도전막, 투명 도전막 형성용 타깃의 제조 방법 및 투명 도전막의 제조 방법을 제공한다. [해결 수단] In, Sn, Zn, O를 포함하고, Sn/(In＋Sn＋Zn)=7~17at%, Zn/(In＋Sn＋Zn)=0.5~12at%, Sn와 Zn의 원자수비(Sn/Zn)가 1.3 이상이며, 또한 XRD 측정에 따른 InO결정상에 대한 SnInO결정상의 피크 강도비(SnInO/InO)가 0.10 이하이고, 상대 밀도가 97% 이상인 투명 도전막 형성용 타깃이다.
TARGET FOR FORMING TRANSPARENT CONDUCTIVE FILM TRANSPARENT CONDUCTIVE FILM METHOD OF MANUFACTURING TARGET FOR FORMING TRANSPARENT CONDUCTIVE FILM AND METHOD OF MANUFACTURING TRANSPARENT CONDUCTIVE FILM
투명 도전막 형성용 타깃, 투명 도전막, 투명 도전막 형성용 타깃의 제조 방법 및 투명 도전막의 제조 방법
HIDESHIMA MASAAKI (author)
2018-07-02
Patent
Electronic Resource
Korean
METHOD OF MANUFACTURING TRANSPARENT CONDUCTIVE FILM, AND TRANSPARENT CONDUCTIVE FILM
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