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Parametric strudy on InAs quantum dots grown by migration enhanced molecular beam epitaxy
InAs quantum dots grown by migration enhanced epitaxy were studied and optimized by the parameter of growth sequence such as the operation of growth interruption, manipulation of conventional epitaxy and migration enhanced epitaxy and so on. The optical and structural properties of the samples were compared among the samples, and advantage of migration enhanced InAs quantum dots over conventional InAs quantum dots were discussed.
Parametric strudy on InAs quantum dots grown by migration enhanced molecular beam epitaxy
InAs quantum dots grown by migration enhanced epitaxy were studied and optimized by the parameter of growth sequence such as the operation of growth interruption, manipulation of conventional epitaxy and migration enhanced epitaxy and so on. The optical and structural properties of the samples were compared among the samples, and advantage of migration enhanced InAs quantum dots over conventional InAs quantum dots were discussed.
Parametric strudy on InAs quantum dots grown by migration enhanced molecular beam epitaxy
Jindong Song, (author) / Wonjun Choi, (author) / Jungil Lee, (author)
2006-10-01
459322 byte
Conference paper
Electronic Resource
English
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