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Electronic transport in indium oxide nanowire field effect transistors

Gunho Jo, / Jongsun Maeng, / Woong-ki Hong, / Tae-Wook Kim, / Takhee Lee,

High-quality single-crystal indium oxide (In2O3) nanowires (NWs) are synthesized using gold catalytic vapor-liquid-solid growth. The synthesized In2O3 NWs are nonstoichiometric due to oxygen vacancies from X-ray photoelectron spectroscopic study. The In2O3 NW field effect transistors show the n-type behavior due to these oxygen vacancies.

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Electronic transport in indium oxide nanowire field effect transistors

Gunho Jo, / Jongsun Maeng, / Woong-ki Hong, / Tae-Wook Kim, / Takhee Lee,

High-quality single-crystal indium oxide (In2O3) nanowires (NWs) are synthesized using gold catalytic vapor-liquid-solid growth. The synthesized In2O3 NWs are nonstoichiometric due to oxygen vacancies from X-ray photoelectron spectroscopic study. The In2O3 NW field effect transistors show the n-type behavior due to these oxygen vacancies.

Electronic transport in indium oxide nanowire field effect transistors

Gunho Jo, / Jongsun Maeng, / Woong-ki Hong, / Tae-Wook Kim, / Takhee Lee,

High-quality single-crystal indium oxide (In2O3) nanowires (NWs) are synthesized using gold catalytic vapor-liquid-solid growth. The synthesized In2O3 NWs are nonstoichiometric due to oxygen vacancies from X-ray photoelectron spectroscopic study. The In2O3 NW field effect transistors show the n-type behavior due to these oxygen vacancies.

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Title:

Electronic transport in indium oxide nanowire field effect transistors

Contributors:

Gunho Jo, (author) / Jongsun Maeng, (author) / Woong-ki Hong, (author) / Tae-Wook Kim, (author) / Takhee Lee, (author)

Published in:

2006 IEEE Nanotechnology Materials and Devices Conference ; 1 ; 494-495

Publication date:

2006-10-01

Size:

575448 byte

ISBN:

978-1-4244-0541-1 , 978-1-4244-0540-4

DOI:

https://doi.org/10.1109/NMDC.2006.4388833

Type of media:

Conference paper

Type of material:

Electronic Resource

Language:

English

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