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Memory characteristics of MIS capacitors with parylene gate material
Memory characteristics of gold nanoparticlesembedded metal-insulator-semiconductor (MIS) capacitors with polymer (parylene) gate material are investigated in this study. Current density versus voltage (J-V) curves obtained from the MIS capacitors exhibit good performance for the parylene gate insulator compared with other gate insulating materials. Capacitance versus voltage (C-V) curves show a large flat band voltage shift, which indicates the possibility of charge storage in the gold nanoparticles. The clockwise hysteresis observed in the C-V curves implies that the trapped electrons in gold nanoparticles originate from the top electrode.
Memory characteristics of MIS capacitors with parylene gate material
Memory characteristics of gold nanoparticlesembedded metal-insulator-semiconductor (MIS) capacitors with polymer (parylene) gate material are investigated in this study. Current density versus voltage (J-V) curves obtained from the MIS capacitors exhibit good performance for the parylene gate insulator compared with other gate insulating materials. Capacitance versus voltage (C-V) curves show a large flat band voltage shift, which indicates the possibility of charge storage in the gold nanoparticles. The clockwise hysteresis observed in the C-V curves implies that the trapped electrons in gold nanoparticles originate from the top electrode.
Memory characteristics of MIS capacitors with parylene gate material
Park, Byoungjun (author) / Ki-Ju Im, (author) / Kyoungah Cho, (author) / Sangsig Kim, (author)
2006-10-01
655450 byte
Conference paper
Electronic Resource
English
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