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Selective oxidation fin channel MOSFET for source/drain series resistance reduction

Young-Kyun Cho, / Tae Moon Roh, / Jongdae Kim,

A fin channel with a fin dimension as small as 14nm and gradually increased source/drain extension regions are fabricated by using a selective oxidation. Process steps to implement the proposed device are explained briefly. We are demonstrating electrical characteristics of the selective oxidation fin channel MOSFET (SoxFET) compared with the conventional fin field effect transistor (FinFET) via three-dimensional device simulation. Compared to the FinFET, the SoxFET shows a larger drive current, higher linear transconductance, lower series resistance and improved scaling down characteristics.

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Selective oxidation fin channel MOSFET for source/drain series resistance reduction

Young-Kyun Cho, / Tae Moon Roh, / Jongdae Kim,

A fin channel with a fin dimension as small as 14nm and gradually increased source/drain extension regions are fabricated by using a selective oxidation. Process steps to implement the proposed device are explained briefly. We are demonstrating electrical characteristics of the selective oxidation fin channel MOSFET (SoxFET) compared with the conventional fin field effect transistor (FinFET) via three-dimensional device simulation. Compared to the FinFET, the SoxFET shows a larger drive current, higher linear transconductance, lower series resistance and improved scaling down characteristics.

Selective oxidation fin channel MOSFET for source/drain series resistance reduction

Young-Kyun Cho, / Tae Moon Roh, / Jongdae Kim,

A fin channel with a fin dimension as small as 14nm and gradually increased source/drain extension regions are fabricated by using a selective oxidation. Process steps to implement the proposed device are explained briefly. We are demonstrating electrical characteristics of the selective oxidation fin channel MOSFET (SoxFET) compared with the conventional fin field effect transistor (FinFET) via three-dimensional device simulation. Compared to the FinFET, the SoxFET shows a larger drive current, higher linear transconductance, lower series resistance and improved scaling down characteristics.

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Title:

Selective oxidation fin channel MOSFET for source/drain series resistance reduction

Contributors:

Young-Kyun Cho, (author) / Tae Moon Roh, (author) / Jongdae Kim, (author)

Published in:

2006 IEEE Nanotechnology Materials and Devices Conference ; 1 ; 420-421

Publication date:

2006-10-01

Size:

668994 byte

ISBN:

978-1-4244-0541-1 , 978-1-4244-0540-4

DOI:

https://doi.org/10.1109/NMDC.2006.4388796

Type of media:

Conference paper

Type of material:

Electronic Resource

Language:

English

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