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Strained-Si with carbon incorporation for MOSFET source/drain engineering

Lee, M. H. / Chang, S. T. / Lee, S. W. / Chen, P. S. / Shen, K. W. / Wang, W. C.

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Strained-Si with carbon incorporation for MOSFET source/drain engineering

Lee, M. H. / Chang, S. T. / Lee, S. W. / Chen, P. S. / Shen, K. W. / Wang, W. C.

Strained-Si with carbon incorporation for MOSFET source/drain engineering

Lee, M. H. / Chang, S. T. / Lee, S. W. / Chen, P. S. / Shen, K. W. / Wang, W. C.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Strained-Si with carbon incorporation for MOSFET source/drain engineering

Contributors:

Lee, M. H. (author) / Chang, S. T. (author) / Lee, S. W. (author) / Chen, P. S. (author) / Shen, K. W. (author) / Wang, W. C. (author)

Published in:

APPLIED SURFACE SCIENCE ; 254 ; 6147-6150

Publication date:

2008-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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