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A platform for research: civil engineering, architecture and urbanism
Fabricated poly-Si thin film transistor with anodizing Al film using nanoindentation
This letter reports the fabrication of polycrystalline silicon thin-film transistors (poly-Si TFT) on glass substrates using Al oxide films by anodizing. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The a-Si films were then laser crystallized using XeCl excimer laser irradiation and a fourmask- processed poly-Si TFTs were fabricated with fully selfaligned top gate structure.
Fabricated poly-Si thin film transistor with anodizing Al film using nanoindentation
This letter reports the fabrication of polycrystalline silicon thin-film transistors (poly-Si TFT) on glass substrates using Al oxide films by anodizing. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The a-Si films were then laser crystallized using XeCl excimer laser irradiation and a fourmask- processed poly-Si TFTs were fabricated with fully selfaligned top gate structure.
Fabricated poly-Si thin film transistor with anodizing Al film using nanoindentation
Jin-Woo Han, (author) / Jong-Yeon Kim, (author) / Hee-Jin Kan, (author) / Hyun-Chan Moon, (author) / Seong-Ho Choi, (author) / Kwang-Bum Park, (author) / Tae-Ha Kim, (author) / Dae-Shik Seo, (author)
2006-10-01
333396 byte
Conference paper
Electronic Resource
English
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