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    Investigation of Organometallic Vapor Phase Epitaxy of InAs and InAsBi at Temperatures as Low as 275C. (Reannouncement with New Availability Information)

    New search for: K. Y. Ma
    New search for: Z. M. Fang
    New search for: R. M. Cohen
    New search for: G. B. Stringfellow

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    Investigation of Organometallic Vapor Phase Epitaxy of InAs and InAsBi at Temperatures as Low as 275C. (Reannouncement with New Availability Information)

    New search for: K. Y. Ma
    New search for: Z. M. Fang
    New search for: R. M. Cohen
    New search for: G. B. Stringfellow

    Access

    Access via TIB
    Check availability in my library

    Investigation of Organometallic Vapor Phase Epitaxy of InAs and InAsBi at Temperatures as Low as 275C. (Reannouncement with New Availability Information)

    New search for: K. Y. Ma
    New search for: Z. M. Fang
    New search for: R. M. Cohen
    New search for: G. B. Stringfellow

    Access

    Access via TIB
    Check availability in my library

    Access

    Access via TIB
    Check availability in my library

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Investigation of Organometallic Vapor Phase Epitaxy of InAs and InAsBi at Temperatures as Low as 275C. (Reannouncement with New Availability Information)

    Contributors:

    K. Y. Ma (author) / Z. M. Fang (author) / R. M. Cohen (author) / G. B. Stringfellow (author)

    Publication date:

    1991

    Size:

    4 pages

    Type of media:

    Report

    Type of material:

    No indication

    Language:

    English

    Keywords:

    Solid State Physics , Basic & Synthetic Chemistry , Epitaxial growth , Impurities , Semiconductors , Organometallic compounds , Low temperature , Reprints , Vapor phase epitaxy , Indium arsenides , Indium arsenide bismuthides

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