Investigation of Organometallic Vapor Phase Epitaxy of InAs and InAsBi at Temperatures as Low as 275C. (Reannouncement with New Availability Information)

K. Y. Ma / Z. M. Fang / R. M. Cohen et al. | NTIS | 1991

Nanometer-scale InAs islands grown on GaP (001) by organometallic vapor phase epitaxy

Nonogaki, Y. / Iguchi, T. / Fuchi, S. et al. | British Library Online Contents | 1998

Photoluminescence characterization of GaN thin film grown by atmospheric pressure organometallic vapor phase epitaxy

Liao, S. M. / Wen, J. H. / Chou, W. C. et al. | British Library Online Contents | 1997

Organometallic Vapor Phase Epitaxy (OMVPE)

Breiland, W. G. / Coltrin, M. E. / Creighton, J. R. et al. | British Library Online Contents | 1999

Photoluminescence investigation of superlattice ordering in organometallic vapour phase epitaxy grown InGaP layers

Longo, M. / Parisini, A. / Tarricone, L. et al. | British Library Online Contents | 2001