Nanometer-scale InAs islands grown on GaP (001) by organometallic vapor phase epitaxy: Fid-Bau Portal

Nanometer-scale InAs islands grown on GaP (001) by organometallic vapor phase epitaxy

Nonogaki, Y. / Iguchi, T. / Fuchi, S. / Fujiwara, Y. / Takeda, Y.

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Nanometer-scale InAs islands grown on GaP (001) by organometallic vapor phase epitaxy

Nonogaki, Y. / Iguchi, T. / Fuchi, S. / Fujiwara, Y. / Takeda, Y.

Nanometer-scale InAs islands grown on GaP (001) by organometallic vapor phase epitaxy

Nonogaki, Y. / Iguchi, T. / Fuchi, S. / Fujiwara, Y. / Takeda, Y.

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Check availability in my library

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Document information

Title:

Nanometer-scale InAs islands grown on GaP (001) by organometallic vapor phase epitaxy

Contributors:

Nonogaki, Y. (author) / Iguchi, T. (author) / Fuchi, S. (author) / Fujiwara, Y. (author) / Takeda, Y. (author)

Published in:

APPLIED SURFACE SCIENCE ; 130-132 ; 724-728

Publication date:

1998-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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