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Precursor Development for Aluminum Nitride Deposition

L. M. Smith

This report results from a contract tasking Epichem Ltd as follows: The contractor, in close collaboration with the University of Liverpool, UK, Dr. Anthony C. Jones, will investigate the fundamental chemistry required to synthesize mono-amine adducts of aluminum trichloride and study the mechanism of Aluminum liberation from this synthesized adduct during Hydride Vapor Phase Epitaxy (HVPE) deposition. The goal of this research is to optimize and characterize aluminum trichloride for use in Aluminum Nitride production using HVPE. In addition to the research, four Aluminum Trichloride formulations will be synthesized and sent to AFRL/SNHC.

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Precursor Development for Aluminum Nitride Deposition

L. M. Smith

This report results from a contract tasking Epichem Ltd as follows: The contractor, in close collaboration with the University of Liverpool, UK, Dr. Anthony C. Jones, will investigate the fundamental chemistry required to synthesize mono-amine adducts of aluminum trichloride and study the mechanism of Aluminum liberation from this synthesized adduct during Hydride Vapor Phase Epitaxy (HVPE) deposition. The goal of this research is to optimize and characterize aluminum trichloride for use in Aluminum Nitride production using HVPE. In addition to the research, four Aluminum Trichloride formulations will be synthesized and sent to AFRL/SNHC.

Precursor Development for Aluminum Nitride Deposition

L. M. Smith

This report results from a contract tasking Epichem Ltd as follows: The contractor, in close collaboration with the University of Liverpool, UK, Dr. Anthony C. Jones, will investigate the fundamental chemistry required to synthesize mono-amine adducts of aluminum trichloride and study the mechanism of Aluminum liberation from this synthesized adduct during Hydride Vapor Phase Epitaxy (HVPE) deposition. The goal of this research is to optimize and characterize aluminum trichloride for use in Aluminum Nitride production using HVPE. In addition to the research, four Aluminum Trichloride formulations will be synthesized and sent to AFRL/SNHC.

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Title:

Precursor Development for Aluminum Nitride Deposition

Contributors:

L. M. Smith (author)

Publication date:

2003

Size:

3 pages

Type of media:

Report

Type of material:

No indication

Language:

English

Keywords:

Basic & Synthetic Chemistry , United kingdom , Synthesis(Chemistry) , Chemical vapor deposition , Epitaxial growth , Semiconductors , Aluminum nitrides , Foreign reports , Aq f04-19-1008 , Adducts , Aluminum trichloride , Wide bandgap semiconductors

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